Modulation doping in ZnO nanorods for electrical nanodevice applications

Jinkyoung Yoo, Chul-Ho Lee, Yong Joo Doh, Hye Seong Jung, Gyu Chul Yi

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We introduce a modulation-doping method to control electrical characteristics of ZnO nanorods. Compared with a conventional homogeneous doping method, the modulation-doping method generates localized doping layers along the circumference in ZnO nanorods, useful for many device applications. Here, we investigated electrical, structural, and optical characteristics of Ga-doped ZnO nanorods with the dopant modulation layers. Electrical conductivity of ZnO nanorods was controlled by changing either dopant mole fraction or the number of modulation-doped layers. Furthermore, the modulation-doped nanorod field effect transistors exhibited precisely controlled conductance in the order of magnitude without degradation of electron mobility. The effects of the doping on structural and optical characteristics of the nanorods are also discussed.

Original languageEnglish
Article number223117
JournalApplied Physics Letters
Volume94
Issue number22
DOIs
Publication statusPublished - 2009 Jun 15
Externally publishedYes

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modulation doping
nanorods
modulation
circumferences
electron mobility
field effect transistors
degradation
electrical resistivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Modulation doping in ZnO nanorods for electrical nanodevice applications. / Yoo, Jinkyoung; Lee, Chul-Ho; Doh, Yong Joo; Jung, Hye Seong; Yi, Gyu Chul.

In: Applied Physics Letters, Vol. 94, No. 22, 223117, 15.06.2009.

Research output: Contribution to journalArticle

Yoo, Jinkyoung ; Lee, Chul-Ho ; Doh, Yong Joo ; Jung, Hye Seong ; Yi, Gyu Chul. / Modulation doping in ZnO nanorods for electrical nanodevice applications. In: Applied Physics Letters. 2009 ; Vol. 94, No. 22.
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