Modulation of thermal conductivity in kinked silicon nanowires: Phonon interchanging and pinching effects

Jin Wu Jiang, Nuo Yang, Bing Shen Wang, Timon Rabczuk

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

Original languageEnglish
Pages (from-to)1670-1674
Number of pages5
JournalNano Letters
Volume13
Issue number4
DOIs
Publication statusPublished - 2013 Apr 10
Externally publishedYes

Fingerprint

Silicon
Nanowires
Thermal conductivity
nanowires
thermal conductivity
Modulation
modulation
silicon
kinking
thermoelectric materials
twisting
Molecular dynamics
heat transfer
Polarization
molecular dynamics
Heat transfer
Temperature
temperature dependence
Computer simulation
room temperature

Keywords

  • Kinked silicon nanowire
  • phonon localization
  • phonon pinching effect
  • thermal conductivity

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Modulation of thermal conductivity in kinked silicon nanowires : Phonon interchanging and pinching effects. / Jiang, Jin Wu; Yang, Nuo; Wang, Bing Shen; Rabczuk, Timon.

In: Nano Letters, Vol. 13, No. 4, 10.04.2013, p. 1670-1674.

Research output: Contribution to journalArticle

Jiang, Jin Wu ; Yang, Nuo ; Wang, Bing Shen ; Rabczuk, Timon. / Modulation of thermal conductivity in kinked silicon nanowires : Phonon interchanging and pinching effects. In: Nano Letters. 2013 ; Vol. 13, No. 4. pp. 1670-1674.
@article{0db46875d682436e9d0f350fb7e8bff4,
title = "Modulation of thermal conductivity in kinked silicon nanowires: Phonon interchanging and pinching effects",
abstract = "We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70{\%} at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.",
keywords = "Kinked silicon nanowire, phonon localization, phonon pinching effect, thermal conductivity",
author = "Jiang, {Jin Wu} and Nuo Yang and Wang, {Bing Shen} and Timon Rabczuk",
year = "2013",
month = "4",
day = "10",
doi = "10.1021/nl400127q",
language = "English",
volume = "13",
pages = "1670--1674",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "4",

}

TY - JOUR

T1 - Modulation of thermal conductivity in kinked silicon nanowires

T2 - Phonon interchanging and pinching effects

AU - Jiang, Jin Wu

AU - Yang, Nuo

AU - Wang, Bing Shen

AU - Rabczuk, Timon

PY - 2013/4/10

Y1 - 2013/4/10

N2 - We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

AB - We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

KW - Kinked silicon nanowire

KW - phonon localization

KW - phonon pinching effect

KW - thermal conductivity

UR - http://www.scopus.com/inward/record.url?scp=84876044025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876044025&partnerID=8YFLogxK

U2 - 10.1021/nl400127q

DO - 10.1021/nl400127q

M3 - Article

C2 - 23517486

AN - SCOPUS:84876044025

VL - 13

SP - 1670

EP - 1674

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 4

ER -