Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better?

I. T. Ferguson, A. G. Norman, B. A. Joyce, T. Y. Seong, G. R. Booker, R. H. Thomas, C. C. Phillips, R. A. Stradling

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Abstract

Molecular beam epitaxial growth of a normally homogeneous InAs 0.5Sb0.5 alloy below 430 °C results in its coherent phase separation into platelets of two different alloy compositions with tetragonally distorted crystal lattices. This produces a ''natural'' strained layer superlattice (n-SLS) with clearly defined interfaces modulated in the [001] growth direction. A description of the n-SLS growth mode in InAsSb is outlined, and the optical response of a n-SLS structure, which extends to 12.5 μm-considerably further than that of a homogeneous InAs0.5Sb 0.5 layer (8.9 μm)-is reported.

Original languageEnglish
Pages (from-to)3324-3326
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number25
DOIs
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ferguson, I. T., Norman, A. G., Joyce, B. A., Seong, T. Y., Booker, G. R., Thomas, R. H., Phillips, C. C., & Stradling, R. A. (1991). Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better? Applied Physics Letters, 59(25), 3324-3326. https://doi.org/10.1063/1.105720