Molecular beam epitaxial growth of In0.65Ga0.35 As quantum wells on GaAs substrates for 1.5 μm exciton resonance

Sam Dong Kim, Heon Lee, J. S. Harris

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A novel approach of growing high quality In0.65Ga0.35As multiple quantum wells (MQWs) with Al0.33Ga0.67As barriers on GaAs substrates by molecular beam epitaxy (MBE) is reported for optical devices operating near 1.5 μm at room temperature. Operation at 1.5 μm requires InGaAs QWs with very large lattice mismatch to the GaAs substrates (4.7% in this study). The best quality MQWs were achieved by adding one monolayer of GaAs smoothing layers with growth interruptions at the interfaces of both sides of the InGaAs wells and by growing at a very low temperature (280{ring operator}C) compared to the buffer layers and typical InGaAs layer growth temperatures (450{ring operator}C). The MQW region was grown on a linearly-graded InGaAs buffer layer with a 10% / μm grading rate which was fully relaxed, very smooth, and completely defect-free at the top region. This sample showed a sharp exciton peak near 1.5 μm at room temperature. Cross-section transmission electron microscopy (XTEM), four crystal X-ray diffractometry, and optical absorption measurement were used to characterize the MQW structures.

Original languageEnglish
Pages (from-to)37-43
Number of pages7
JournalJournal of Crystal Growth
Volume141
Issue number1-2
Publication statusPublished - 1994 Aug 1
Externally publishedYes

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Molecular beams
Epitaxial growth
Excitons
Semiconductor quantum wells
molecular beams
excitons
quantum wells
Substrates
Buffer layers
buffers
operators
Lattice mismatch
rings
interruption
Growth temperature
room temperature
Optical devices
Molecular beam epitaxy
smoothing
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Molecular beam epitaxial growth of In0.65Ga0.35 As quantum wells on GaAs substrates for 1.5 μm exciton resonance. / Kim, Sam Dong; Lee, Heon; Harris, J. S.

In: Journal of Crystal Growth, Vol. 141, No. 1-2, 01.08.1994, p. 37-43.

Research output: Contribution to journalArticle

@article{8439ac1b60904fb4a82811e02b36f0cf,
title = "Molecular beam epitaxial growth of In0.65Ga0.35 As quantum wells on GaAs substrates for 1.5 μm exciton resonance",
abstract = "A novel approach of growing high quality In0.65Ga0.35As multiple quantum wells (MQWs) with Al0.33Ga0.67As barriers on GaAs substrates by molecular beam epitaxy (MBE) is reported for optical devices operating near 1.5 μm at room temperature. Operation at 1.5 μm requires InGaAs QWs with very large lattice mismatch to the GaAs substrates (4.7{\%} in this study). The best quality MQWs were achieved by adding one monolayer of GaAs smoothing layers with growth interruptions at the interfaces of both sides of the InGaAs wells and by growing at a very low temperature (280{ring operator}C) compared to the buffer layers and typical InGaAs layer growth temperatures (450{ring operator}C). The MQW region was grown on a linearly-graded InGaAs buffer layer with a 10{\%} / μm grading rate which was fully relaxed, very smooth, and completely defect-free at the top region. This sample showed a sharp exciton peak near 1.5 μm at room temperature. Cross-section transmission electron microscopy (XTEM), four crystal X-ray diffractometry, and optical absorption measurement were used to characterize the MQW structures.",
author = "Kim, {Sam Dong} and Heon Lee and Harris, {J. S.}",
year = "1994",
month = "8",
day = "1",
language = "English",
volume = "141",
pages = "37--43",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Molecular beam epitaxial growth of In0.65Ga0.35 As quantum wells on GaAs substrates for 1.5 μm exciton resonance

AU - Kim, Sam Dong

AU - Lee, Heon

AU - Harris, J. S.

PY - 1994/8/1

Y1 - 1994/8/1

N2 - A novel approach of growing high quality In0.65Ga0.35As multiple quantum wells (MQWs) with Al0.33Ga0.67As barriers on GaAs substrates by molecular beam epitaxy (MBE) is reported for optical devices operating near 1.5 μm at room temperature. Operation at 1.5 μm requires InGaAs QWs with very large lattice mismatch to the GaAs substrates (4.7% in this study). The best quality MQWs were achieved by adding one monolayer of GaAs smoothing layers with growth interruptions at the interfaces of both sides of the InGaAs wells and by growing at a very low temperature (280{ring operator}C) compared to the buffer layers and typical InGaAs layer growth temperatures (450{ring operator}C). The MQW region was grown on a linearly-graded InGaAs buffer layer with a 10% / μm grading rate which was fully relaxed, very smooth, and completely defect-free at the top region. This sample showed a sharp exciton peak near 1.5 μm at room temperature. Cross-section transmission electron microscopy (XTEM), four crystal X-ray diffractometry, and optical absorption measurement were used to characterize the MQW structures.

AB - A novel approach of growing high quality In0.65Ga0.35As multiple quantum wells (MQWs) with Al0.33Ga0.67As barriers on GaAs substrates by molecular beam epitaxy (MBE) is reported for optical devices operating near 1.5 μm at room temperature. Operation at 1.5 μm requires InGaAs QWs with very large lattice mismatch to the GaAs substrates (4.7% in this study). The best quality MQWs were achieved by adding one monolayer of GaAs smoothing layers with growth interruptions at the interfaces of both sides of the InGaAs wells and by growing at a very low temperature (280{ring operator}C) compared to the buffer layers and typical InGaAs layer growth temperatures (450{ring operator}C). The MQW region was grown on a linearly-graded InGaAs buffer layer with a 10% / μm grading rate which was fully relaxed, very smooth, and completely defect-free at the top region. This sample showed a sharp exciton peak near 1.5 μm at room temperature. Cross-section transmission electron microscopy (XTEM), four crystal X-ray diffractometry, and optical absorption measurement were used to characterize the MQW structures.

UR - http://www.scopus.com/inward/record.url?scp=0028485746&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028485746&partnerID=8YFLogxK

M3 - Article

VL - 141

SP - 37

EP - 43

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -