Molecular-beam-epitaxy-grown ZnSe/ZnTe high-reflectivity distributed Bragg reflectors

F. C. Peiris, Sang Hoon Lee, U. Bindley, J. K. Furdyna

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A series of distributed Bragg reflectors (DBRs) with different numbers of periods were fabricated by molecular beam epitaxy using ZnSe and ZnTe layers grown on GaAs substrates. The ZnSe/ZnTe combination manifests over 7% lattice mismatch, which leads to a deterioration of multilayer stacks with large numbers of periods. However, even with the deposition of only eight periods we have obtained ZnSe/ZnTe DBR structures which yield reflectivities in excess of 85%. Furthermore, these DBRs show wide stop-bands - an additional advantage of using the ZnSe/ZnTe combination. By varying the number of periods in these structures, we have also studied how the reflectivity changes with the number of periods in this materials combination. The reflectivity obtained by depositing four ZnSe/ZnTe periods was 66.5%, while by depositing 15 periods we obtained 91% reflectivity.

Original languageEnglish
Pages (from-to)878-882
Number of pages5
JournalSemiconductor Science and Technology
Volume14
Issue number9
DOIs
Publication statusPublished - 1999 Sep 1
Externally publishedYes

Fingerprint

Distributed Bragg reflectors
Bragg reflectors
Molecular beam epitaxy
molecular beam epitaxy
reflectance
Lattice mismatch
deterioration
Deterioration
Multilayers
broadband
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Molecular-beam-epitaxy-grown ZnSe/ZnTe high-reflectivity distributed Bragg reflectors. / Peiris, F. C.; Lee, Sang Hoon; Bindley, U.; Furdyna, J. K.

In: Semiconductor Science and Technology, Vol. 14, No. 9, 01.09.1999, p. 878-882.

Research output: Contribution to journalArticle

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