TY - JOUR
T1 - Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide
AU - Oberman, D. B.
AU - Lee, H.
AU - Götz, W. K.
AU - Harris, J. S.
N1 - Funding Information:
This work was supportedb y ONR/ARPA un der contractN o. N00014-93-1-137a5n dby CNOM under contractN o. N00014-92-J-1903.
PY - 1995
Y1 - 1995
N2 - GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were ∼ 0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were ∼ 0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III–V nitrides by MBE, and it shows great promise as a nitrogen source.
AB - GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were ∼ 0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were ∼ 0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III–V nitrides by MBE, and it shows great promise as a nitrogen source.
UR - http://www.scopus.com/inward/record.url?scp=0029307274&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(95)80072-K
DO - 10.1016/0022-0248(95)80072-K
M3 - Article
AN - SCOPUS:0029307274
SN - 0022-0248
VL - 150
SP - 912
EP - 915
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -