Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

D. B. Oberman, Heon Lee, W. K. Gotz, J. S. Harris

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were approx.0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were approx.0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III-V nitrides by MBE, and it shows great promise as a nitrogen source.

Original languageEnglish
Pages (from-to)912-915
Number of pages4
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 2
Publication statusPublished - 1995 May 1
Externally publishedYes

Fingerprint

hydrogen azides
Gallium nitride
Electron cyclotron resonance
Azides
gallium nitrides
electron cyclotron resonance
Molecular beam epitaxy
Hydrogen
molecular beam epitaxy
Plasmas
Photoluminescence
Nitrogen
photoluminescence
nitrogen
Plasma sources
Aluminum Oxide
Sapphire
Nitrides
nitrides
sapphire

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide. / Oberman, D. B.; Lee, Heon; Gotz, W. K.; Harris, J. S.

In: Journal of Crystal Growth, Vol. 150, No. 1 -4 pt 2, 01.05.1995, p. 912-915.

Research output: Contribution to journalArticle

Oberman, D. B. ; Lee, Heon ; Gotz, W. K. ; Harris, J. S. / Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide. In: Journal of Crystal Growth. 1995 ; Vol. 150, No. 1 -4 pt 2. pp. 912-915.
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