GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were approx.0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were approx.0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III-V nitrides by MBE, and it shows great promise as a nitrogen source.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Issue number||1 -4 pt 2|
|Publication status||Published - 1995 May 1|
ASJC Scopus subject areas
- Condensed Matter Physics