Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

D. B. Oberman, H. Lee, W. K. Götz, J. S. Harris

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were ∼ 0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were ∼ 0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III–V nitrides by MBE, and it shows great promise as a nitrogen source.

Original languageEnglish
Pages (from-to)912-915
Number of pages4
JournalJournal of Crystal Growth
Volume150
DOIs
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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