Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide

D. B. Oberman, Heon Lee, W. K. Gotz, J. S. Harris

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Abstract

GaN films were grown on (0001) sapphire by molecular beam epitaxy (MBE). Two sources of activated nitrogen were investigated: an electron cyclotron resonance (ECR) plasma, and hydrogen azide (HN3). With the ECR plasma source, typical growth rates were approx.0.1 μm/h. Films grown in this manner showed significant surface damage from ions, and little if any photoluminescence. With HN3, growth rates were approx.0.25 μm/h. Azide-grown films showed smooth surfaces, and sharp band-to-band photoluminescence. This is the first reported use of HN3 to grow III-V nitrides by MBE, and it shows great promise as a nitrogen source.

Original languageEnglish
Pages (from-to)912-915
Number of pages4
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 2
Publication statusPublished - 1995 May 1
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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