Molecular dynamics simulation study of deposition and annealing behaviors of Al atoms on Cu surface

S. P. Kim, K. R. Lee, Y. C. Chung, M. Sahashi, Young-geun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Deposition and annealing behaviors of Al atoms on rough Cu (111) surface were investigated on the atomic scale by three-dimensional classical molecular dynamics simulation. The rough Cu surface was modeled by depositing 5 ML of Cu on Ta (011) substrate. Most Al atoms deposited on the rough Cu surface placed on the atomic steps, preserving the major features of the surface during Al deposition. This behavior was discussed in terms of the smaller barrier of the surface diffusion than Ehrlich-Schwoebel barrier of Al on Cu (111) surface. By annealing at 700 K, significant intermixing between Al and Cu rapidly occurs with decrease in the surface roughness. This behavior reveals that the exchange process of Al with substrate Cu dominates during the initial stage of high temperature annealing.

Original languageEnglish
Article number114312
JournalJournal of Applied Physics
Volume105
Issue number11
DOIs
Publication statusPublished - 2009 Jul 6

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molecular dynamics
annealing
atoms
simulation
surface diffusion
preserving
surface roughness

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Molecular dynamics simulation study of deposition and annealing behaviors of Al atoms on Cu surface. / Kim, S. P.; Lee, K. R.; Chung, Y. C.; Sahashi, M.; Kim, Young-geun.

In: Journal of Applied Physics, Vol. 105, No. 11, 114312, 06.07.2009.

Research output: Contribution to journalArticle

@article{0c421611173848b0be7ef002f4878109,
title = "Molecular dynamics simulation study of deposition and annealing behaviors of Al atoms on Cu surface",
abstract = "Deposition and annealing behaviors of Al atoms on rough Cu (111) surface were investigated on the atomic scale by three-dimensional classical molecular dynamics simulation. The rough Cu surface was modeled by depositing 5 ML of Cu on Ta (011) substrate. Most Al atoms deposited on the rough Cu surface placed on the atomic steps, preserving the major features of the surface during Al deposition. This behavior was discussed in terms of the smaller barrier of the surface diffusion than Ehrlich-Schwoebel barrier of Al on Cu (111) surface. By annealing at 700 K, significant intermixing between Al and Cu rapidly occurs with decrease in the surface roughness. This behavior reveals that the exchange process of Al with substrate Cu dominates during the initial stage of high temperature annealing.",
author = "Kim, {S. P.} and Lee, {K. R.} and Chung, {Y. C.} and M. Sahashi and Young-geun Kim",
year = "2009",
month = "7",
day = "6",
doi = "10.1063/1.3142382",
language = "English",
volume = "105",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Molecular dynamics simulation study of deposition and annealing behaviors of Al atoms on Cu surface

AU - Kim, S. P.

AU - Lee, K. R.

AU - Chung, Y. C.

AU - Sahashi, M.

AU - Kim, Young-geun

PY - 2009/7/6

Y1 - 2009/7/6

N2 - Deposition and annealing behaviors of Al atoms on rough Cu (111) surface were investigated on the atomic scale by three-dimensional classical molecular dynamics simulation. The rough Cu surface was modeled by depositing 5 ML of Cu on Ta (011) substrate. Most Al atoms deposited on the rough Cu surface placed on the atomic steps, preserving the major features of the surface during Al deposition. This behavior was discussed in terms of the smaller barrier of the surface diffusion than Ehrlich-Schwoebel barrier of Al on Cu (111) surface. By annealing at 700 K, significant intermixing between Al and Cu rapidly occurs with decrease in the surface roughness. This behavior reveals that the exchange process of Al with substrate Cu dominates during the initial stage of high temperature annealing.

AB - Deposition and annealing behaviors of Al atoms on rough Cu (111) surface were investigated on the atomic scale by three-dimensional classical molecular dynamics simulation. The rough Cu surface was modeled by depositing 5 ML of Cu on Ta (011) substrate. Most Al atoms deposited on the rough Cu surface placed on the atomic steps, preserving the major features of the surface during Al deposition. This behavior was discussed in terms of the smaller barrier of the surface diffusion than Ehrlich-Schwoebel barrier of Al on Cu (111) surface. By annealing at 700 K, significant intermixing between Al and Cu rapidly occurs with decrease in the surface roughness. This behavior reveals that the exchange process of Al with substrate Cu dominates during the initial stage of high temperature annealing.

UR - http://www.scopus.com/inward/record.url?scp=67649522959&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649522959&partnerID=8YFLogxK

U2 - 10.1063/1.3142382

DO - 10.1063/1.3142382

M3 - Article

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 114312

ER -