Molecular-scale charge trap medium for organic non-volatile memory transistors

Sang A. Lee, Dae Yoon Kim, Kwang Un Jeong, Sang Hyun Lee, Sukang Bae, Dong Su Lee, Gunuk Wang, Tae Wook Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this work, we introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor (ONVMTs). We use two different types of small molecules, 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), which have the same triphenylene cores with either hydroxyl or methoxy end groups. The thickness of the small molecule charge trap layer was sophisticatedly controlled using the thermal evaporation method. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis revealed that there were negligible differences in the chemical structures of both small molecules before and after thermal deposition process. The ONVMTs with a 1-nm-thick HHTP charge trap layer showed a large hysteresis window, approximately 20 V, under a double sweep of the gate bias between 40 V and -40 V. The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis. The number of trapped charges on the HHTP charge trap layer was measured to be 4.21 × 1012 cm-2. By varying the thickness of the molecular-scale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.

Original languageEnglish
Article number3242
Pages (from-to)18-23
Number of pages6
JournalOrganic Electronics: physics, materials, applications
Volume27
DOIs
Publication statusPublished - 2015 Dec 1

Fingerprint

Transistors
transistors
traps
Data storage equipment
Hydroxyl Radical
Molecules
Hysteresis
Charge trapping
Thermal evaporation
Fourier transforms
X ray photoelectron spectroscopy
hysteresis
Infrared radiation
molecules
trapping
evaporation
photoelectron spectroscopy
x rays
2,3,6,7,10,11-hexahydroxytriphenylene
triphenylene

Keywords

  • Charge trap layer
  • Organic non-volatile memory transistor
  • Small molecule
  • Triphenylene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Lee, S. A., Kim, D. Y., Jeong, K. U., Lee, S. H., Bae, S., Lee, D. S., ... Kim, T. W. (2015). Molecular-scale charge trap medium for organic non-volatile memory transistors. Organic Electronics: physics, materials, applications, 27, 18-23. [3242]. https://doi.org/10.1016/j.orgel.2015.08.020

Molecular-scale charge trap medium for organic non-volatile memory transistors. / Lee, Sang A.; Kim, Dae Yoon; Jeong, Kwang Un; Lee, Sang Hyun; Bae, Sukang; Lee, Dong Su; Wang, Gunuk; Kim, Tae Wook.

In: Organic Electronics: physics, materials, applications, Vol. 27, 3242, 01.12.2015, p. 18-23.

Research output: Contribution to journalArticle

Lee, Sang A. ; Kim, Dae Yoon ; Jeong, Kwang Un ; Lee, Sang Hyun ; Bae, Sukang ; Lee, Dong Su ; Wang, Gunuk ; Kim, Tae Wook. / Molecular-scale charge trap medium for organic non-volatile memory transistors. In: Organic Electronics: physics, materials, applications. 2015 ; Vol. 27. pp. 18-23.
@article{7d6609a1a5e44e3ca704300e671b4ed6,
title = "Molecular-scale charge trap medium for organic non-volatile memory transistors",
abstract = "In this work, we introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor (ONVMTs). We use two different types of small molecules, 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), which have the same triphenylene cores with either hydroxyl or methoxy end groups. The thickness of the small molecule charge trap layer was sophisticatedly controlled using the thermal evaporation method. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis revealed that there were negligible differences in the chemical structures of both small molecules before and after thermal deposition process. The ONVMTs with a 1-nm-thick HHTP charge trap layer showed a large hysteresis window, approximately 20 V, under a double sweep of the gate bias between 40 V and -40 V. The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis. The number of trapped charges on the HHTP charge trap layer was measured to be 4.21 × 1012 cm-2. By varying the thickness of the molecular-scale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.",
keywords = "Charge trap layer, Organic non-volatile memory transistor, Small molecule, Triphenylene",
author = "Lee, {Sang A.} and Kim, {Dae Yoon} and Jeong, {Kwang Un} and Lee, {Sang Hyun} and Sukang Bae and Lee, {Dong Su} and Gunuk Wang and Kim, {Tae Wook}",
year = "2015",
month = "12",
day = "1",
doi = "10.1016/j.orgel.2015.08.020",
language = "English",
volume = "27",
pages = "18--23",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",

}

TY - JOUR

T1 - Molecular-scale charge trap medium for organic non-volatile memory transistors

AU - Lee, Sang A.

AU - Kim, Dae Yoon

AU - Jeong, Kwang Un

AU - Lee, Sang Hyun

AU - Bae, Sukang

AU - Lee, Dong Su

AU - Wang, Gunuk

AU - Kim, Tae Wook

PY - 2015/12/1

Y1 - 2015/12/1

N2 - In this work, we introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor (ONVMTs). We use two different types of small molecules, 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), which have the same triphenylene cores with either hydroxyl or methoxy end groups. The thickness of the small molecule charge trap layer was sophisticatedly controlled using the thermal evaporation method. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis revealed that there were negligible differences in the chemical structures of both small molecules before and after thermal deposition process. The ONVMTs with a 1-nm-thick HHTP charge trap layer showed a large hysteresis window, approximately 20 V, under a double sweep of the gate bias between 40 V and -40 V. The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis. The number of trapped charges on the HHTP charge trap layer was measured to be 4.21 × 1012 cm-2. By varying the thickness of the molecular-scale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.

AB - In this work, we introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor (ONVMTs). We use two different types of small molecules, 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), which have the same triphenylene cores with either hydroxyl or methoxy end groups. The thickness of the small molecule charge trap layer was sophisticatedly controlled using the thermal evaporation method. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis revealed that there were negligible differences in the chemical structures of both small molecules before and after thermal deposition process. The ONVMTs with a 1-nm-thick HHTP charge trap layer showed a large hysteresis window, approximately 20 V, under a double sweep of the gate bias between 40 V and -40 V. The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis. The number of trapped charges on the HHTP charge trap layer was measured to be 4.21 × 1012 cm-2. By varying the thickness of the molecular-scale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.

KW - Charge trap layer

KW - Organic non-volatile memory transistor

KW - Small molecule

KW - Triphenylene

UR - http://www.scopus.com/inward/record.url?scp=84940884591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940884591&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2015.08.020

DO - 10.1016/j.orgel.2015.08.020

M3 - Article

AN - SCOPUS:84940884591

VL - 27

SP - 18

EP - 23

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

M1 - 3242

ER -