Abstract
In this work, we introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor (ONVMTs). We use two different types of small molecules, 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), which have the same triphenylene cores with either hydroxyl or methoxy end groups. The thickness of the small molecule charge trap layer was sophisticatedly controlled using the thermal evaporation method. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis revealed that there were negligible differences in the chemical structures of both small molecules before and after thermal deposition process. The ONVMTs with a 1-nm-thick HHTP charge trap layer showed a large hysteresis window, approximately 20 V, under a double sweep of the gate bias between 40 V and -40 V. The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis. The number of trapped charges on the HHTP charge trap layer was measured to be 4.21 × 1012 cm-2. By varying the thickness of the molecular-scale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.
| Original language | English |
|---|---|
| Article number | 3242 |
| Pages (from-to) | 18-23 |
| Number of pages | 6 |
| Journal | Organic Electronics: physics, materials, applications |
| Volume | 27 |
| DOIs | |
| Publication status | Published - 2015 Dec 1 |
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Keywords
- Charge trap layer
- Organic non-volatile memory transistor
- Small molecule
- Triphenylene
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
Molecular-scale charge trap medium for organic non-volatile memory transistors. / Lee, Sang A.; Kim, Dae Yoon; Jeong, Kwang Un; Lee, Sang Hyun; Bae, Sukang; Lee, Dong Su; Wang, Gunuk; Kim, Tae Wook.
In: Organic Electronics: physics, materials, applications, Vol. 27, 3242, 01.12.2015, p. 18-23.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Molecular-scale charge trap medium for organic non-volatile memory transistors
AU - Lee, Sang A.
AU - Kim, Dae Yoon
AU - Jeong, Kwang Un
AU - Lee, Sang Hyun
AU - Bae, Sukang
AU - Lee, Dong Su
AU - Wang, Gunuk
AU - Kim, Tae Wook
PY - 2015/12/1
Y1 - 2015/12/1
N2 - In this work, we introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor (ONVMTs). We use two different types of small molecules, 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), which have the same triphenylene cores with either hydroxyl or methoxy end groups. The thickness of the small molecule charge trap layer was sophisticatedly controlled using the thermal evaporation method. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis revealed that there were negligible differences in the chemical structures of both small molecules before and after thermal deposition process. The ONVMTs with a 1-nm-thick HHTP charge trap layer showed a large hysteresis window, approximately 20 V, under a double sweep of the gate bias between 40 V and -40 V. The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis. The number of trapped charges on the HHTP charge trap layer was measured to be 4.21 × 1012 cm-2. By varying the thickness of the molecular-scale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.
AB - In this work, we introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor (ONVMTs). We use two different types of small molecules, 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) and 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), which have the same triphenylene cores with either hydroxyl or methoxy end groups. The thickness of the small molecule charge trap layer was sophisticatedly controlled using the thermal evaporation method. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis revealed that there were negligible differences in the chemical structures of both small molecules before and after thermal deposition process. The ONVMTs with a 1-nm-thick HHTP charge trap layer showed a large hysteresis window, approximately 20 V, under a double sweep of the gate bias between 40 V and -40 V. The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis. The number of trapped charges on the HHTP charge trap layer was measured to be 4.21 × 1012 cm-2. By varying the thickness of the molecular-scale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.
KW - Charge trap layer
KW - Organic non-volatile memory transistor
KW - Small molecule
KW - Triphenylene
UR - http://www.scopus.com/inward/record.url?scp=84940884591&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84940884591&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2015.08.020
DO - 10.1016/j.orgel.2015.08.020
M3 - Article
AN - SCOPUS:84940884591
VL - 27
SP - 18
EP - 23
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
M1 - 3242
ER -