Monitoring of magnetization processes in GaMnAs ferromagnetic film by electrical transport measurement

D. Y. Shin; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1016/j.jcrysgro.2008.09.109

Monitoring of magnetization processes in GaMnAs ferromagnetic film by electrical transport measurement

D. Y. Shin, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The transport measurement technique has been adapted to investigate the magnetization processes of GaMnAs ferromagnetic semiconductor film. While the planar Hall resistance (PHR) reached different values at 3 K in each attempt for zero field cooling (ZFC) process, it always ended the same value in the field cooling (FC) process. This indicates that the GaMnAs film in the absence of magnetic field magnetized randomly among four magnetic easy axes along 〈1 0 0〉 directions without preference of specific direction, while the presence of the magnetic field provides preference of the magnetization to specific direction. The PHR measured with and without external magnetic field in the heating process also showed significantly different behavior, which originate from the temperature dependence of magnetic anisotropy in the GaMnAs film.

Original language	English
Pages (from-to)	925-928
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.109
Publication status	Published - 2009 Jan 15

Keywords

A3. Molecular bean epitaxy
B1. Gallium compounds
B2. Magnetic materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.09.109

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Shin, D. Y., Lee, S., Liu, X., & Furdyna, J. K. (2009). Monitoring of magnetization processes in GaMnAs ferromagnetic film by electrical transport measurement. Journal of Crystal Growth, 311(3), 925-928. https://doi.org/10.1016/j.jcrysgro.2008.09.109

@article{1a4043d8c565408a84526f4ce83bd177,

title = "Monitoring of magnetization processes in GaMnAs ferromagnetic film by electrical transport measurement",

abstract = "The transport measurement technique has been adapted to investigate the magnetization processes of GaMnAs ferromagnetic semiconductor film. While the planar Hall resistance (PHR) reached different values at 3 K in each attempt for zero field cooling (ZFC) process, it always ended the same value in the field cooling (FC) process. This indicates that the GaMnAs film in the absence of magnetic field magnetized randomly among four magnetic easy axes along 〈1 0 0〉 directions without preference of specific direction, while the presence of the magnetic field provides preference of the magnetization to specific direction. The PHR measured with and without external magnetic field in the heating process also showed significantly different behavior, which originate from the temperature dependence of magnetic anisotropy in the GaMnAs film.",

keywords = "A3. Molecular bean epitaxy, B1. Gallium compounds, B2. Magnetic materials",

author = "Shin, {D. Y.} and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

year = "2009",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2008.09.109",

language = "English",

volume = "311",

pages = "925--928",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Monitoring of magnetization processes in GaMnAs ferromagnetic film by electrical transport measurement

AU - Shin, D. Y.

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2009/1/15

Y1 - 2009/1/15

N2 - The transport measurement technique has been adapted to investigate the magnetization processes of GaMnAs ferromagnetic semiconductor film. While the planar Hall resistance (PHR) reached different values at 3 K in each attempt for zero field cooling (ZFC) process, it always ended the same value in the field cooling (FC) process. This indicates that the GaMnAs film in the absence of magnetic field magnetized randomly among four magnetic easy axes along 〈1 0 0〉 directions without preference of specific direction, while the presence of the magnetic field provides preference of the magnetization to specific direction. The PHR measured with and without external magnetic field in the heating process also showed significantly different behavior, which originate from the temperature dependence of magnetic anisotropy in the GaMnAs film.

AB - The transport measurement technique has been adapted to investigate the magnetization processes of GaMnAs ferromagnetic semiconductor film. While the planar Hall resistance (PHR) reached different values at 3 K in each attempt for zero field cooling (ZFC) process, it always ended the same value in the field cooling (FC) process. This indicates that the GaMnAs film in the absence of magnetic field magnetized randomly among four magnetic easy axes along 〈1 0 0〉 directions without preference of specific direction, while the presence of the magnetic field provides preference of the magnetization to specific direction. The PHR measured with and without external magnetic field in the heating process also showed significantly different behavior, which originate from the temperature dependence of magnetic anisotropy in the GaMnAs film.

KW - A3. Molecular bean epitaxy

KW - B1. Gallium compounds

KW - B2. Magnetic materials

UR - http://www.scopus.com/inward/record.url?scp=59749102547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59749102547&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.09.109

DO - 10.1016/j.jcrysgro.2008.09.109

M3 - Article

AN - SCOPUS:59749102547

VL - 311

SP - 925

EP - 928

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3

ER -