Monolithic GaAs PHEMT MMICs integrated with RF MEMS switches

J. B. Hacker, Moonil Kim, R. E. Mihailovich, J. F. DeNatale

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

Low-loss RF MEMS switches have been integrated with HEMT MMIC circuits on GaAs substrates to allow the fabrication of a new class of high-performance microwave and millimeter-wave circuits. The integration process allows the co-integration of MEMS microrelays and GaAs PHEMT devices with no sacrifice in performance or yield to either device. Examples of circuits fabricated include multi-band low-noise amplifiers, transmit and receive (T/R) circuits, and a switched dual-width power amplifier at X-band. The power amplifier uses two MEMS switches at the input to guide the RF signal between two paths. Each path provides single-stage amplification using different size HEMT devices to optimize efficiency over a wide range of output power levels.

Original languageEnglish
Title of host publicationTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Pages229-232
Number of pages4
DOIs
Publication statusPublished - 2004 Dec 1
EventIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium - Monterey, CA, United States
Duration: 2004 Oct 242004 Oct 27

Other

OtherIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium
CountryUnited States
CityMonterey, CA
Period04/10/2404/10/27

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Keywords

  • Amplifier
  • HEMT
  • MEMS switch
  • MMIC

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hacker, J. B., Kim, M., Mihailovich, R. E., & DeNatale, J. F. (2004). Monolithic GaAs PHEMT MMICs integrated with RF MEMS switches. In Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC (pp. 229-232) https://doi.org/10.1109/CSICS.2004.1392546