Monolithically integrated dual-band quantum well infrared photodetector

D. K. Sengupta, S. D. Gunapala, S. V. Bandara, F. Pool, J. K. Liu, M. McKelvey, E. Luong, J. Torezan, J. Mumulo, W. Hong, J. Gill, G. E. Stillman, A. P. Curtis, Sangsig Kim, L. J. Chou, al et al

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3-5.3μm and 7.5-14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and lattice-matched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3-5.3μm and 7.5-14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is approx. 0.065A/W at 4.9μm and approx. 0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3-5.3μm and 7.5-14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages205-214
Number of pages10
Volume484
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: 1997 Dec 11997 Dec 4

Other

OtherProceedings of the 1997 MRS Fall Symposium
CityBoston, MA, USA
Period97/12/197/12/4

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Quantum well infrared photodetectors
Wavelength
Electric potential
Semiconductor quantum wells
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Sengupta, D. K., Gunapala, S. D., Bandara, S. V., Pool, F., Liu, J. K., McKelvey, M., ... et al, A. (1997). Monolithically integrated dual-band quantum well infrared photodetector. In Materials Research Society Symposium - Proceedings (Vol. 484, pp. 205-214). MRS.

Monolithically integrated dual-band quantum well infrared photodetector. / Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Pool, F.; Liu, J. K.; McKelvey, M.; Luong, E.; Torezan, J.; Mumulo, J.; Hong, W.; Gill, J.; Stillman, G. E.; Curtis, A. P.; Kim, Sangsig; Chou, L. J.; et al, al.

Materials Research Society Symposium - Proceedings. Vol. 484 MRS, 1997. p. 205-214.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sengupta, DK, Gunapala, SD, Bandara, SV, Pool, F, Liu, JK, McKelvey, M, Luong, E, Torezan, J, Mumulo, J, Hong, W, Gill, J, Stillman, GE, Curtis, AP, Kim, S, Chou, LJ & et al, A 1997, Monolithically integrated dual-band quantum well infrared photodetector. in Materials Research Society Symposium - Proceedings. vol. 484, MRS, pp. 205-214, Proceedings of the 1997 MRS Fall Symposium, Boston, MA, USA, 97/12/1.
Sengupta DK, Gunapala SD, Bandara SV, Pool F, Liu JK, McKelvey M et al. Monolithically integrated dual-band quantum well infrared photodetector. In Materials Research Society Symposium - Proceedings. Vol. 484. MRS. 1997. p. 205-214
Sengupta, D. K. ; Gunapala, S. D. ; Bandara, S. V. ; Pool, F. ; Liu, J. K. ; McKelvey, M. ; Luong, E. ; Torezan, J. ; Mumulo, J. ; Hong, W. ; Gill, J. ; Stillman, G. E. ; Curtis, A. P. ; Kim, Sangsig ; Chou, L. J. ; et al, al. / Monolithically integrated dual-band quantum well infrared photodetector. Materials Research Society Symposium - Proceedings. Vol. 484 MRS, 1997. pp. 205-214
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abstract = "A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3-5.3μm and 7.5-14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and lattice-matched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3-5.3μm and 7.5-14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is approx. 0.065A/W at 4.9μm and approx. 0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3-5.3μm and 7.5-14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.",
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T1 - Monolithically integrated dual-band quantum well infrared photodetector

AU - Sengupta, D. K.

AU - Gunapala, S. D.

AU - Bandara, S. V.

AU - Pool, F.

AU - Liu, J. K.

AU - McKelvey, M.

AU - Luong, E.

AU - Torezan, J.

AU - Mumulo, J.

AU - Hong, W.

AU - Gill, J.

AU - Stillman, G. E.

AU - Curtis, A. P.

AU - Kim, Sangsig

AU - Chou, L. J.

AU - et al, al

PY - 1997

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N2 - A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3-5.3μm and 7.5-14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and lattice-matched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3-5.3μm and 7.5-14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is approx. 0.065A/W at 4.9μm and approx. 0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3-5.3μm and 7.5-14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.

AB - A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3-5.3μm and 7.5-14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and lattice-matched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3-5.3μm and 7.5-14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is approx. 0.065A/W at 4.9μm and approx. 0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3-5.3μm and 7.5-14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.

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BT - Materials Research Society Symposium - Proceedings

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