Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.
- Monolithic integration
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering