Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

J. S. Rieh, D. Klotzkin, O. Qasaimeh, L. H. Lu, K. Yang, L. P.B. Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

Original languageEnglish
Pages (from-to)415-417
Number of pages3
JournalIEEE Photonics Technology Letters
Volume10
Issue number3
DOIs
Publication statusPublished - 1998 Mar
Externally publishedYes

Keywords

  • Monolithic integration
  • Photoreceivers
  • SiGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Rieh, J. S., Klotzkin, D., Qasaimeh, O., Lu, L. H., Yang, K., Katehi, L. P. B., Bhattacharya, P., & Croke, E. T. (1998). Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers. IEEE Photonics Technology Letters, 10(3), 415-417. https://doi.org/10.1109/68.661428