Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

Jae-Sung Rieh, D. Klotzkin, O. Qasaimeh, L. H. Lu, K. Yang, L. P B Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

Original languageEnglish
Pages (from-to)415-417
Number of pages3
JournalIEEE Photonics Technology Letters
Volume10
Issue number3
DOIs
Publication statusPublished - 1998 Mar 1
Externally publishedYes

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Heterojunction bipolar transistors
bandwidth
Bandwidth
Operational amplifiers
Photodiodes
photodiodes
amplifiers
Fabrication
fabrication

Keywords

  • Monolithic integration
  • Photoreceivers
  • SiGe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Rieh, J-S., Klotzkin, D., Qasaimeh, O., Lu, L. H., Yang, K., Katehi, L. P. B., ... Croke, E. T. (1998). Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers. IEEE Photonics Technology Letters, 10(3), 415-417. https://doi.org/10.1109/68.661428

Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers. / Rieh, Jae-Sung; Klotzkin, D.; Qasaimeh, O.; Lu, L. H.; Yang, K.; Katehi, L. P B; Bhattacharya, P.; Croke, E. T.

In: IEEE Photonics Technology Letters, Vol. 10, No. 3, 01.03.1998, p. 415-417.

Research output: Contribution to journalArticle

Rieh, J-S, Klotzkin, D, Qasaimeh, O, Lu, LH, Yang, K, Katehi, LPB, Bhattacharya, P & Croke, ET 1998, 'Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers', IEEE Photonics Technology Letters, vol. 10, no. 3, pp. 415-417. https://doi.org/10.1109/68.661428
Rieh, Jae-Sung ; Klotzkin, D. ; Qasaimeh, O. ; Lu, L. H. ; Yang, K. ; Katehi, L. P B ; Bhattacharya, P. ; Croke, E. T. / Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers. In: IEEE Photonics Technology Letters. 1998 ; Vol. 10, No. 3. pp. 415-417.
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