Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers

Jae-Sung Rieh, O. Qasaimeh, D. Klotzkin, L. H. Lu, K. Yang, L. P B Katehi, P. Bhattacharya, E. T. Croke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si hetero-junction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit fmax of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dBΩ and 47.4 dBΩ, respectively. Monolithically integrated single-feedback PIN-HBT photo-receivers were implemented and the bandwidth was measured to be approximately 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

Original languageEnglish
Title of host publicationProceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages322-331
Number of pages10
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1997 Aug 41997 Aug 6

Other

OtherProceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period97/8/497/8/6

Fingerprint

Heterojunction bipolar transistors
Bandwidth
Photodiodes
Feedback amplifiers
Operational amplifiers
Feedback
Networks (circuits)
Costs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Rieh, J-S., Qasaimeh, O., Klotzkin, D., Lu, L. H., Yang, K., Katehi, L. P. B., ... Croke, E. T. (1997). Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers. In Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (pp. 322-331). Piscataway, NJ, United States: IEEE.

Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers. / Rieh, Jae-Sung; Qasaimeh, O.; Klotzkin, D.; Lu, L. H.; Yang, K.; Katehi, L. P B; Bhattacharya, P.; Croke, E. T.

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Piscataway, NJ, United States : IEEE, 1997. p. 322-331.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rieh, J-S, Qasaimeh, O, Klotzkin, D, Lu, LH, Yang, K, Katehi, LPB, Bhattacharya, P & Croke, ET 1997, Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers. in Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. IEEE, Piscataway, NJ, United States, pp. 322-331, Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 97/8/4.
Rieh J-S, Qasaimeh O, Klotzkin D, Lu LH, Yang K, Katehi LPB et al. Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers. In Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Piscataway, NJ, United States: IEEE. 1997. p. 322-331
Rieh, Jae-Sung ; Qasaimeh, O. ; Klotzkin, D. ; Lu, L. H. ; Yang, K. ; Katehi, L. P B ; Bhattacharya, P. ; Croke, E. T. / Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Piscataway, NJ, United States : IEEE, 1997. pp. 322-331
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AU - Yang, K.

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