Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers

J. S. Rieh, O. Qasaimeh, D. Klotzkin, L. H. Lu, K. Yang, L. P.B. Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si hetero-junction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit fmax of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dBΩ and 47.4 dBΩ, respectively. Monolithically integrated single-feedback PIN-HBT photo-receivers were implemented and the bandwidth was measured to be approximately 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

Original languageEnglish
Pages322-331
Number of pages10
DOIs
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1997 Aug 41997 Aug 6

Other

OtherProceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period97/8/497/8/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers'. Together they form a unique fingerprint.

  • Cite this

    Rieh, J. S., Qasaimeh, O., Klotzkin, D., Lu, L. H., Yang, K., Katehi, L. P. B., Bhattacharya, P., & Croke, E. T. (1997). Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers. 322-331. Paper presented at Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, . https://doi.org/10.1109/cornel.1997.649373