MoS2 field-effect transistors by non-covalent functionalisation

Hyunjeong Kim, Wungyeon Kim, Maria O'Brien, Niall McEvoy, Chanyoung Yim, Mario Marcia, Frank Hauke, Andreas Hirsch, Gyu-Tae Kim, Georg S. Duesberg

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7 Citations (Scopus)

Abstract

Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a perylene bisimide derivative to allow for the deposition of Al2O3 dielectric. This allowed the fabrication of top-gated, fully encapsulated MoS2 FETs. Furthermore, by the definition of vertical contacts on MoS2, devices, in which the channel area was never exposed to polymers, were fabricated. The MoS2 FETs showed some of the highest mobilities for transistors fabricated on SiO2 with Al2O3 as the top-gate dielectric reported so far. Thus, gate-stack engineering using innovative chemistry is a promising approach for the fabrication of reliable electronic devices based on 2D materials.

Original languageEnglish
Pages (from-to)17557-17566
Number of pages10
JournalNanoscale
Volume10
Issue number37
DOIs
Publication statusPublished - 2018 Oct 7

ASJC Scopus subject areas

  • Materials Science(all)

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    Kim, H., Kim, W., O'Brien, M., McEvoy, N., Yim, C., Marcia, M., Hauke, F., Hirsch, A., Kim, G-T., & Duesberg, G. S. (2018). MoS2 field-effect transistors by non-covalent functionalisation. Nanoscale, 10(37), 17557-17566. https://doi.org/10.1039/c8nr02134a