Movement of basal plane dislocations in GaN during electron beam irradiation

E. B. Yakimov, P. S. Vergeles, A. Y. Polyakov, In-Hwan Lee, S. J. Pearton

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Abstract

The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.

Original languageEnglish
Article number132101
JournalApplied Physics Letters
Volume106
Issue number13
DOIs
Publication statusPublished - 2015 Mar 30
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Yakimov, E. B., Vergeles, P. S., Polyakov, A. Y., Lee, I-H., & Pearton, S. J. (2015). Movement of basal plane dislocations in GaN during electron beam irradiation. Applied Physics Letters, 106(13), [132101]. https://doi.org/10.1063/1.4916632