Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states

Joo hyeon Lee; Hyung jun Kim; Joonyeon Chang; Suk Hee Han; Hyun Cheol Koo; Shehrin Sayed; Seokmin Hong; Supriyo Datta

doi:10.1038/s41598-018-21760-9

Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states

Joo hyeon Lee, Hyung jun Kim, Joonyeon Chang, Suk Hee Han, Hyun Cheol Koo, Shehrin Sayed, Seokmin Hong, Supriyo Datta

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (R _P ) and antiparallel (R _AP ) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., R _AP(1) > R _P > R _AP(2) , up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm.

Original language	English
Article number	3397
Journal	Scientific reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-21760-9
Publication status	Published - 2018 Dec 1

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title = "Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states",

abstract = " In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (R P ) and antiparallel (R AP ) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., R AP(1) > R P > R AP(2) , up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm.",

author = "Lee, {Joo hyeon} and Kim, {Hyung jun} and Joonyeon Chang and Han, {Suk Hee} and Koo, {Hyun Cheol} and Shehrin Sayed and Seokmin Hong and Supriyo Datta",

note = "Funding Information: This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project Number SRFC-MA1502-06. We acknowledge KIST and KU-KIST Institutional Programs for providing fabrication and measurement systems. Publisher Copyright: {\textcopyright} 2018, The Author(s).",

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doi = "10.1038/s41598-018-21760-9",

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AU - Lee, Joo hyeon

AU - Kim, Hyung jun

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Koo, Hyun Cheol

AU - Sayed, Shehrin

AU - Hong, Seokmin

AU - Datta, Supriyo

N1 - Funding Information: This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project Number SRFC-MA1502-06. We acknowledge KIST and KU-KIST Institutional Programs for providing fabrication and measurement systems. Publisher Copyright: © 2018, The Author(s).

PY - 2018/12/1

Y1 - 2018/12/1

N2 - In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (R P ) and antiparallel (R AP ) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., R AP(1) > R P > R AP(2) , up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm.

AB - In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (R P ) and antiparallel (R AP ) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., R AP(1) > R P > R AP(2) , up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm.

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SN - 2045-2322

VL - 8

JO - Scientific Reports

JF - Scientific Reports

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ER -

Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states

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