Multi-valued planar hall resistance manipulated by current induced magnetic field in Fe films grown on GaAs(001) substrates

Sungwon Khym, Taehee Yoo, Hakjoon Lee, Sangyeop Lee, Sang Hoon Lee, Xinyu Liu, Jacek K. Furdyna, Dong Uk Lee, Eun Kyu Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A Hall device was fabricated from single-crystal Fe film having two in-plane magnetic easy axes. Planar Hall resistance measured by sequential application of current pulses to the metal strip that was deposited on the top of a Hall bar showed a hysteresis similar to that observed by scanning an external magnetic field. It was shown that discrete Hall resistance values in the hysteresis, which correspond to specific multidomain structures in Fe film, can be created by the application of appropriate sequences of current pulses to the metal strip, and can thus be used for read/write logic applications.

Original languageEnglish
Article number093004
JournalApplied Physics Express
Volume5
Issue number9
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

Hall resistance
Induced currents
metal strips
Strip metal
Magnetic fields
Hysteresis
Substrates
hysteresis
magnetic fields
pulses
logic
Single crystals
Scanning
scanning
single crystals

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Multi-valued planar hall resistance manipulated by current induced magnetic field in Fe films grown on GaAs(001) substrates. / Khym, Sungwon; Yoo, Taehee; Lee, Hakjoon; Lee, Sangyeop; Lee, Sang Hoon; Liu, Xinyu; Furdyna, Jacek K.; Lee, Dong Uk; Kim, Eun Kyu.

In: Applied Physics Express, Vol. 5, No. 9, 093004, 01.09.2012.

Research output: Contribution to journalArticle

Khym, Sungwon ; Yoo, Taehee ; Lee, Hakjoon ; Lee, Sangyeop ; Lee, Sang Hoon ; Liu, Xinyu ; Furdyna, Jacek K. ; Lee, Dong Uk ; Kim, Eun Kyu. / Multi-valued planar hall resistance manipulated by current induced magnetic field in Fe films grown on GaAs(001) substrates. In: Applied Physics Express. 2012 ; Vol. 5, No. 9.
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