Multi-valued planar hall resistance manipulated by current induced magnetic field in Fe films grown on GaAs(001) substrates

Sungwon Khym; Taehee Yoo; Hakjoon Lee; Sangyeop Lee; Sanghoon Lee; Xinyu Liu; Jacek K. Furdyna; Dong Uk Lee; Eun Kyu Kim

doi:10.1143/APEX.5.093004

Multi-valued planar hall resistance manipulated by current induced magnetic field in Fe films grown on GaAs(001) substrates

Sungwon Khym, Taehee Yoo, Hakjoon Lee, Sangyeop Lee, Sanghoon Lee, Xinyu Liu, Jacek K. Furdyna, Dong Uk Lee, Eun Kyu Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A Hall device was fabricated from single-crystal Fe film having two in-plane magnetic easy axes. Planar Hall resistance measured by sequential application of current pulses to the metal strip that was deposited on the top of a Hall bar showed a hysteresis similar to that observed by scanning an external magnetic field. It was shown that discrete Hall resistance values in the hysteresis, which correspond to specific multidomain structures in Fe film, can be created by the application of appropriate sequences of current pulses to the metal strip, and can thus be used for read/write logic applications.

Original language	English
Article number	093004
Journal	Applied Physics Express
Volume	5
Issue number	9
DOIs	https://doi.org/10.1143/APEX.5.093004
Publication status	Published - 2012 Sept

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Multi-valued planar hall resistance manipulated by current induced magnetic field in Fe films grown on GaAs(001) substrates",

abstract = "A Hall device was fabricated from single-crystal Fe film having two in-plane magnetic easy axes. Planar Hall resistance measured by sequential application of current pulses to the metal strip that was deposited on the top of a Hall bar showed a hysteresis similar to that observed by scanning an external magnetic field. It was shown that discrete Hall resistance values in the hysteresis, which correspond to specific multidomain structures in Fe film, can be created by the application of appropriate sequences of current pulses to the metal strip, and can thus be used for read/write logic applications.",

author = "Sungwon Khym and Taehee Yoo and Hakjoon Lee and Sangyeop Lee and Sanghoon Lee and Xinyu Liu and Furdyna, {Jacek K.} and Lee, {Dong Uk} and Kim, {Eun Kyu}",

year = "2012",

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doi = "10.1143/APEX.5.093004",

language = "English",

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journal = "Applied Physics Express",

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AU - Khym, Sungwon

AU - Yoo, Taehee

AU - Lee, Hakjoon

AU - Lee, Sangyeop

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Furdyna, Jacek K.

AU - Lee, Dong Uk

AU - Kim, Eun Kyu

PY - 2012/9

Y1 - 2012/9

N2 - A Hall device was fabricated from single-crystal Fe film having two in-plane magnetic easy axes. Planar Hall resistance measured by sequential application of current pulses to the metal strip that was deposited on the top of a Hall bar showed a hysteresis similar to that observed by scanning an external magnetic field. It was shown that discrete Hall resistance values in the hysteresis, which correspond to specific multidomain structures in Fe film, can be created by the application of appropriate sequences of current pulses to the metal strip, and can thus be used for read/write logic applications.

AB - A Hall device was fabricated from single-crystal Fe film having two in-plane magnetic easy axes. Planar Hall resistance measured by sequential application of current pulses to the metal strip that was deposited on the top of a Hall bar showed a hysteresis similar to that observed by scanning an external magnetic field. It was shown that discrete Hall resistance values in the hysteresis, which correspond to specific multidomain structures in Fe film, can be created by the application of appropriate sequences of current pulses to the metal strip, and can thus be used for read/write logic applications.

UR - http://www.scopus.com/inward/record.url?scp=84866419688&partnerID=8YFLogxK

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VL - 5

JO - Applied Physics Express

JF - Applied Physics Express

IS - 9

M1 - 093004

ER -

Multi-valued planar hall resistance manipulated by current induced magnetic field in Fe films grown on GaAs(001) substrates

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