Multibit MoS 2 Photoelectronic Memory with Ultrahigh Sensitivity

Dain Lee, Euyheon Hwang, Youngbin Lee, Yongsuk Choi, Jong Su Kim, Seungwoo Lee, Jeong Ho Cho

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The operation of a generic single-layer MoS 2 photoelectronic memory device that fully utilized the exotic electrical and optical properties of single-layer MoS 2 . A single-layer MoS 2 flake with a direct band gap of 1.8 eV acted as both a channel material and a light-absorption layer, and AuNPs were employed as the charge-trapping layers to achieve high-performance memory operation. Photoillumination excited the electrons in the MoS 2 layer valence band into the conduction band. Before the photoinduced excitons had recombined, the application of a negative gate voltage induced charge transfer from the AuNPs to the MoS 2 valance band. The transferred electrons prohibited recombination among the photoexcited electrons, which enabled the persistent storage of photonic signals. The transferred electrons prohibited recombination among the photoexcited electrons, which enabled the persistent storage of photonic signals. The multilevel data storage could be deterministically reconfigured by both the applied gate voltage and the illumination power. The resulting MoS 2 photoelectronic memories exhibited excellent memory characteristics, including a large programming/erasing current ratio, multilevel data storage, cyclic endurance, and stable retention.

Original languageEnglish
Pages (from-to)9196-9202
Number of pages7
JournalAdvanced Materials
Volume28
Issue number41
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

Fingerprint

Data storage equipment
Electrons
Photonics
Charge trapping
Electric potential
Valence bands
Computer programming
Conduction bands
Excitons
Light absorption
Charge transfer
Electric properties
Durability
Energy gap
Optical properties
Lighting
Haemophilus influenzae type b-polysaccharide vaccine-diphtheria toxoid conjugate

Keywords

  • memory devices, floating gates
  • MoS
  • multilevel programs
  • nonvolatile photoelectronic memory

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, D., Hwang, E., Lee, Y., Choi, Y., Kim, J. S., Lee, S., & Cho, J. H. (2016). Multibit MoS 2 Photoelectronic Memory with Ultrahigh Sensitivity Advanced Materials, 28(41), 9196-9202. https://doi.org/10.1002/adma.201603571

Multibit MoS 2 Photoelectronic Memory with Ultrahigh Sensitivity . / Lee, Dain; Hwang, Euyheon; Lee, Youngbin; Choi, Yongsuk; Kim, Jong Su; Lee, Seungwoo; Cho, Jeong Ho.

In: Advanced Materials, Vol. 28, No. 41, 01.01.2016, p. 9196-9202.

Research output: Contribution to journalArticle

Lee, D, Hwang, E, Lee, Y, Choi, Y, Kim, JS, Lee, S & Cho, JH 2016, ' Multibit MoS 2 Photoelectronic Memory with Ultrahigh Sensitivity ', Advanced Materials, vol. 28, no. 41, pp. 9196-9202. https://doi.org/10.1002/adma.201603571
Lee, Dain ; Hwang, Euyheon ; Lee, Youngbin ; Choi, Yongsuk ; Kim, Jong Su ; Lee, Seungwoo ; Cho, Jeong Ho. / Multibit MoS 2 Photoelectronic Memory with Ultrahigh Sensitivity In: Advanced Materials. 2016 ; Vol. 28, No. 41. pp. 9196-9202.
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