Abstract
Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.
| Original language | English |
|---|---|
| Article number | 143112 |
| Journal | Applied Physics Letters |
| Volume | 95 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Kim, J., Yun, J. H., Han, C. S., Cho, Y. J., Park, J., & Park, Y. C. (2009). Multiple silicon nanowires-embedded Schottky solar cell. Applied Physics Letters, 95(14), [143112]. https://doi.org/10.1063/1.3245310