Multiple silicon nanowires-embedded Schottky solar cell

Joondong Kim; Ju Hyung Yun; Chang-Soo Han; Yong Jae Cho; Jeunghee Park; Yun Chang Park

doi:10.1063/1.3245310

Multiple silicon nanowires-embedded Schottky solar cell

Joondong Kim, Ju Hyung Yun, Chang-Soo Han, Yong Jae Cho, Jeunghee Park, Yun Chang Park

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.

Original language	English
Article number	143112
Journal	Applied Physics Letters
Volume	95
Issue number	14
DOIs	https://doi.org/10.1063/1.3245310
Publication status	Published - 2009 Oct 19
Externally published	Yes

Fingerprint

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Kim, J., Yun, J. H., Han, C-S., Cho, Y. J., Park, J., & Park, Y. C. (2009). Multiple silicon nanowires-embedded Schottky solar cell. Applied Physics Letters, 95(14), [143112]. https://doi.org/10.1063/1.3245310

@article{7a2a9cc56be64bd7ba89d9f3a698cac8,

title = "Multiple silicon nanowires-embedded Schottky solar cell",

abstract = "Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.",

author = "Joondong Kim and Yun, {Ju Hyung} and Chang-Soo Han and Cho, {Yong Jae} and Jeunghee Park and Park, {Yun Chang}",

year = "2009",

month = oct

day = "19",

doi = "10.1063/1.3245310",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Multiple silicon nanowires-embedded Schottky solar cell

AU - Kim, Joondong

AU - Yun, Ju Hyung

AU - Han, Chang-Soo

AU - Cho, Yong Jae

AU - Park, Jeunghee

AU - Park, Yun Chang

PY - 2009/10/19

Y1 - 2009/10/19

N2 - Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.

AB - Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.

UR - http://www.scopus.com/inward/record.url?scp=70349911576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349911576&partnerID=8YFLogxK

U2 - 10.1063/1.3245310

DO - 10.1063/1.3245310

M3 - Article

AN - SCOPUS:70349911576

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 143112

ER -

Access to Document

10.1063/1.3245310