Multiple silicon nanowires-embedded Schottky solar cell

Joondong Kim; Ju Hyung Yun; Chang Soo Han; Yong Jae Cho; Jeunghee Park; Yun Chang Park

doi:10.1063/1.3245310

Multiple silicon nanowires-embedded Schottky solar cell

Joondong Kim, Ju Hyung Yun, Chang Soo Han, Yong Jae Cho, Jeunghee Park, Yun Chang Park

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.

Original language	English
Article number	143112
Journal	Applied Physics Letters
Volume	95
Issue number	14
DOIs	https://doi.org/10.1063/1.3245310
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.",

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AU - Kim, Joondong

AU - Yun, Ju Hyung

AU - Han, Chang Soo

AU - Cho, Yong Jae

AU - Park, Jeunghee

AU - Park, Yun Chang

PY - 2009

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AB - Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.

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