Abstract
Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.
| Original language | English |
|---|---|
| Article number | 143112 |
| Journal | Applied Physics Letters |
| Volume | 95 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2009 Oct 19 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Multiple silicon nanowires-embedded Schottky solar cell. / Kim, Joondong; Yun, Ju Hyung; Han, Chang-Soo; Cho, Yong Jae; Park, Jeunghee; Park, Yun Chang.
In: Applied Physics Letters, Vol. 95, No. 14, 143112, 19.10.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Multiple silicon nanowires-embedded Schottky solar cell
AU - Kim, Joondong
AU - Yun, Ju Hyung
AU - Han, Chang-Soo
AU - Cho, Yong Jae
AU - Park, Jeunghee
AU - Park, Yun Chang
PY - 2009/10/19
Y1 - 2009/10/19
N2 - Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.
AB - Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.
UR - http://www.scopus.com/inward/record.url?scp=70349911576&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349911576&partnerID=8YFLogxK
U2 - 10.1063/1.3245310
DO - 10.1063/1.3245310
M3 - Article
AN - SCOPUS:70349911576
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 143112
ER -