N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals

Jaewon Jang, Kyoungah Cho, Junggwon Yun, Sangsig Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.

Original languageEnglish
Pages (from-to)2030-2033
Number of pages4
JournalMicroelectronic Engineering
Volume86
Issue number10
DOIs
Publication statusPublished - 2009 Oct 1

Fingerprint

Thin film transistors
Nanocrystals
nanocrystals
transistors
plastics
Plastics
thin films
Gates (transistor)
Substrates
depletion
Temperature
temperature

Keywords

  • Flexible device
  • HgSe nanocrystals
  • Thin-film transistor
  • UV/ozone treatment

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals. / Jang, Jaewon; Cho, Kyoungah; Yun, Junggwon; Kim, Sangsig.

In: Microelectronic Engineering, Vol. 86, No. 10, 01.10.2009, p. 2030-2033.

Research output: Contribution to journalArticle

Jang, Jaewon ; Cho, Kyoungah ; Yun, Junggwon ; Kim, Sangsig. / N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals. In: Microelectronic Engineering. 2009 ; Vol. 86, No. 10. pp. 2030-2033.
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