Na 0.5K 0.5NbO 3 thin films for MFIS_FET type non-volatile memory applications

Choong Rae Cho, Sung Hyuk Park, Byung-Moo Moon, Jonas Sundqvist, Anders Hårsta, Alex Grishin

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

Na 0.5K 0.5NbO 3(NKN) thin films have been prepared on Pt 80Ir 20, SiO 2/Si, and Ta 2O 5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt 80Ir 20 vertical capacitor yielded remnant polarization of 12 μC/cm 2 and coercive field ∼20 kV/cm. Significant flat-band voltage V FB shifts with buffer layer thickness in Au/NKN/SiO 2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO 2 layer. On the other hand, Au/NKN/Ta 2O 5/Si structure exhibited wide memory window without significant V FB deviations, low leakage currents, and rather long retention time at zero bias.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
Pages21-30
Number of pages10
Volume49
DOIs
Publication statusPublished - 2002

Fingerprint

Field effect transistors
Ferroelectric materials
field effect transistors
Data storage equipment
Thin films
Alkalies
Buffer layers
Hysteresis loops
thin films
Leakage currents
alkalies
capacitors
Capacitors
leakage
buffers
hysteresis
Ions
Polarization
deviation
shift

Keywords

  • Au/NKN/Ta O /Si MFIS_diode
  • Ferroelectric non-volatile memory
  • Na K NbO (NKN) thin film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Cho, C. R., Park, S. H., Moon, B-M., Sundqvist, J., Hårsta, A., & Grishin, A. (2002). Na 0.5K 0.5NbO 3 thin films for MFIS_FET type non-volatile memory applications In Integrated Ferroelectrics (Vol. 49, pp. 21-30) https://doi.org/10.1080/10584580215493

Na 0.5K 0.5NbO 3 thin films for MFIS_FET type non-volatile memory applications . / Cho, Choong Rae; Park, Sung Hyuk; Moon, Byung-Moo; Sundqvist, Jonas; Hårsta, Anders; Grishin, Alex.

Integrated Ferroelectrics. Vol. 49 2002. p. 21-30.

Research output: Chapter in Book/Report/Conference proceedingChapter

Cho, CR, Park, SH, Moon, B-M, Sundqvist, J, Hårsta, A & Grishin, A 2002, Na 0.5K 0.5NbO 3 thin films for MFIS_FET type non-volatile memory applications in Integrated Ferroelectrics. vol. 49, pp. 21-30. https://doi.org/10.1080/10584580215493
Cho CR, Park SH, Moon B-M, Sundqvist J, Hårsta A, Grishin A. Na 0.5K 0.5NbO 3 thin films for MFIS_FET type non-volatile memory applications In Integrated Ferroelectrics. Vol. 49. 2002. p. 21-30 https://doi.org/10.1080/10584580215493
Cho, Choong Rae ; Park, Sung Hyuk ; Moon, Byung-Moo ; Sundqvist, Jonas ; Hårsta, Anders ; Grishin, Alex. / Na 0.5K 0.5NbO 3 thin films for MFIS_FET type non-volatile memory applications Integrated Ferroelectrics. Vol. 49 2002. pp. 21-30
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