Na 0.5K 0.5NbO 3 thin films for MFIS_FET type non-volatile memory applications

Choong Rae Cho, Sung Hyuk Park, Byung-Moo Moon, Jonas Sundqvist, Anders Hårsta, Alex Grishin

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

Na 0.5K 0.5NbO 3(NKN) thin films have been prepared on Pt 80Ir 20, SiO 2/Si, and Ta 2O 5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt 80Ir 20 vertical capacitor yielded remnant polarization of 12 μC/cm 2 and coercive field ∼20 kV/cm. Significant flat-band voltage V FB shifts with buffer layer thickness in Au/NKN/SiO 2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO 2 layer. On the other hand, Au/NKN/Ta 2O 5/Si structure exhibited wide memory window without significant V FB deviations, low leakage currents, and rather long retention time at zero bias.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
Pages21-30
Number of pages10
Volume49
DOIs
Publication statusPublished - 2002

Keywords

  • Au/NKN/Ta O /Si MFIS_diode
  • Ferroelectric non-volatile memory
  • Na K NbO (NKN) thin film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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    Cho, C. R., Park, S. H., Moon, B-M., Sundqvist, J., Hårsta, A., & Grishin, A. (2002). Na 0.5K 0.5NbO 3 thin films for MFIS_FET type non-volatile memory applications In Integrated Ferroelectrics (Vol. 49, pp. 21-30) https://doi.org/10.1080/10584580215493