(Na,K)NbO3 thin films using metalorganic chemical vapor deposition

Choong Rae Cho, Byung Moo Moon

Research output: Contribution to journalArticle

Abstract

Ferroelectric (Na,K)NbO3 (NKN) thin films have been synthesized using metalorganic chemical vapor deposition (MOCVD) technique for the first time. The films were deposited on various substrates in a horizontal hot-wall reactor using tetramethyl-heptanedionate (THD) precursors. Epitaxial films have been prepared on SrTiO3 (001) substrates, while nearly perfect [001]-axis oriented polycrystalline thin films have been deposited on SiO 2/Si, SiNx/Si, and sapphire substrates. Electron Spectroscopy for Chemical Analysis (ESCA) analysis indicated that Na, K, Nb, and O are the primary elements present in the film. Dielectric spectroscopy for NKN films on SiO2/Si substrates showed dielectric permittivity ε′ about 140 and loss tan δ less than 2 % in the frequency range from 1 kHz to 120 kHz.

Original languageEnglish
Pages (from-to)39-48
Number of pages10
JournalIntegrated Ferroelectrics
Volume45
DOIs
Publication statusPublished - 2002 Jan 1

Keywords

  • (Na,K)NbO thin film
  • Ferroelectrics
  • Metalorganic chemical vapor deposition (MOCVD)
  • Preferential orientation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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