(Na,K)NbO3 thin films using metalorganic chemical vapor deposition

Choong Rae Cho, Byung Moo Moon

Research output: Contribution to journalArticle


Ferroelectric (Na,K)NbO3 (NKN) thin films have been synthesized using metalorganic chemical vapor deposition (MOCVD) technique for the first time. The films were deposited on various substrates in a horizontal hot-wall reactor using tetramethyl-heptanedionate (THD) precursors. Epitaxial films have been prepared on SrTiO3 (001) substrates, while nearly perfect [001]-axis oriented polycrystalline thin films have been deposited on SiO 2/Si, SiNx/Si, and sapphire substrates. Electron Spectroscopy for Chemical Analysis (ESCA) analysis indicated that Na, K, Nb, and O are the primary elements present in the film. Dielectric spectroscopy for NKN films on SiO2/Si substrates showed dielectric permittivity ε′ about 140 and loss tan δ less than 2 % in the frequency range from 1 kHz to 120 kHz.

Original languageEnglish
Pages (from-to)39-48
Number of pages10
JournalIntegrated Ferroelectrics
Publication statusPublished - 2002 Jan 1


  • (Na,K)NbO thin film
  • Ferroelectrics
  • Metalorganic chemical vapor deposition (MOCVD)
  • Preferential orientation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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