Nano-dot addition effect on the electrical properties of Ni contacts to p-type GaN

Jung Inn Sohn, June O. Song, Dong Seok Leem, Seonghoon Lee, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The correlations between the electrical behaviors of Ni contacts on p-GaN and the insertion of metal nano-dots at the Ni/GaN interfaces have been investigated. The Pt, Au, and Ti nano-dots directly deposited on p-GaN using the anodic porous alumina membrane mask by electron beam evaporation. It is shown that the samples with the inserted nano-dots exhibit better electrical behaviors compared with those without the nano-dots. The improvement of the electrical behaviors is explained in terms of the difference of the Schottky barrier heights between the Ni film and the metal nano-dots, and the enhanced electrical field at the Ni/GaN interfaces due to the presence of the nano-dots. Based on experimental and theoretical results, the possible mechanisms for the improved electrical behaviors is discussed.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2524-2527
Number of pages4
Volume1
Edition10
DOIs
Publication statusPublished - 2004
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Sohn, J. I., Song, J. O., Leem, D. S., Lee, S., & Seong, T. Y. (2004). Nano-dot addition effect on the electrical properties of Ni contacts to p-type GaN. In Physica Status Solidi C: Conferences (10 ed., Vol. 1, pp. 2524-2527) https://doi.org/10.1002/pssc.200405004