Abstract
The correlations between the electrical behaviors of Ni contacts on p-GaN and the insertion of metal nano-dots at the Ni/GaN interfaces have been investigated. The Pt, Au, and Ti nano-dots directly deposited on p-GaN using the anodic porous alumina membrane mask by electron beam evaporation. It is shown that the samples with the inserted nano-dots exhibit better electrical behaviors compared with those without the nano-dots. The improvement of the electrical behaviors is explained in terms of the difference of the Schottky barrier heights between the Ni film and the metal nano-dots, and the enhanced electrical field at the Ni/GaN interfaces due to the presence of the nano-dots. Based on experimental and theoretical results, the possible mechanisms for the improved electrical behaviors is discussed.
| Original language | English |
|---|---|
| Title of host publication | Physica Status Solidi C: Conferences |
| Pages | 2524-2527 |
| Number of pages | 4 |
| Volume | 1 |
| Edition | 10 |
| DOIs | |
| Publication status | Published - 2004 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Nano-dot addition effect on the electrical properties of Ni contacts to p-type GaN. / Sohn, Jung Inn; Song, June O.; Leem, Dong Seok; Lee, Seonghoon; Seong, Tae Yeon.
Physica Status Solidi C: Conferences. Vol. 1 10. ed. 2004. p. 2524-2527.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Nano-dot addition effect on the electrical properties of Ni contacts to p-type GaN
AU - Sohn, Jung Inn
AU - Song, June O.
AU - Leem, Dong Seok
AU - Lee, Seonghoon
AU - Seong, Tae Yeon
PY - 2004
Y1 - 2004
N2 - The correlations between the electrical behaviors of Ni contacts on p-GaN and the insertion of metal nano-dots at the Ni/GaN interfaces have been investigated. The Pt, Au, and Ti nano-dots directly deposited on p-GaN using the anodic porous alumina membrane mask by electron beam evaporation. It is shown that the samples with the inserted nano-dots exhibit better electrical behaviors compared with those without the nano-dots. The improvement of the electrical behaviors is explained in terms of the difference of the Schottky barrier heights between the Ni film and the metal nano-dots, and the enhanced electrical field at the Ni/GaN interfaces due to the presence of the nano-dots. Based on experimental and theoretical results, the possible mechanisms for the improved electrical behaviors is discussed.
AB - The correlations between the electrical behaviors of Ni contacts on p-GaN and the insertion of metal nano-dots at the Ni/GaN interfaces have been investigated. The Pt, Au, and Ti nano-dots directly deposited on p-GaN using the anodic porous alumina membrane mask by electron beam evaporation. It is shown that the samples with the inserted nano-dots exhibit better electrical behaviors compared with those without the nano-dots. The improvement of the electrical behaviors is explained in terms of the difference of the Schottky barrier heights between the Ni film and the metal nano-dots, and the enhanced electrical field at the Ni/GaN interfaces due to the presence of the nano-dots. Based on experimental and theoretical results, the possible mechanisms for the improved electrical behaviors is discussed.
UR - http://www.scopus.com/inward/record.url?scp=7044269326&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=7044269326&partnerID=8YFLogxK
U2 - 10.1002/pssc.200405004
DO - 10.1002/pssc.200405004
M3 - Conference contribution
VL - 1
SP - 2524
EP - 2527
BT - Physica Status Solidi C: Conferences
ER -