Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO 2 tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm2/V s, about 106, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.

Original languageEnglish
Pages (from-to)1966-1969
Number of pages4
JournalSolid State Sciences
Volume12
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

Thin film transistors
floating
transistors
Nanoparticles
Data storage equipment
nanoparticles
thin films
endurance
Electron mobility
programming
Threshold voltage
electron mobility
threshold voltage
Oxides
Electric properties
Durability
electrical properties
Temperature
oxides
shift

Keywords

  • Aluminum
  • Memory
  • Nanoparticle
  • ZnO

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles. / Park, Byoungjun; Cho, Kyoungah; Kim, Sungsu; Kim, Sangsig.

In: Solid State Sciences, Vol. 12, No. 12, 01.12.2010, p. 1966-1969.

Research output: Contribution to journalArticle

Park, Byoungjun ; Cho, Kyoungah ; Kim, Sungsu ; Kim, Sangsig. / Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles. In: Solid State Sciences. 2010 ; Vol. 12, No. 12. pp. 1966-1969.
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