Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO 2 tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm2/V s, about 106, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.

Original languageEnglish
Pages (from-to)1966-1969
Number of pages4
JournalSolid State Sciences
Volume12
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

Keywords

  • Aluminum
  • Memory
  • Nanoparticle
  • ZnO

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles'. Together they form a unique fingerprint.

  • Cite this