In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO 2 tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm2/V s, about 106, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.
|Number of pages||4|
|Journal||Solid State Sciences|
|Publication status||Published - 2010 Dec 1|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics