TY - JOUR
T1 - Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles
AU - Park, Byoungjun
AU - Cho, Kyoungah
AU - Kim, Sungsu
AU - Kim, Sangsig
PY - 2010/12
Y1 - 2010/12
N2 - In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO 2 tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm2/V s, about 106, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.
AB - In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO 2 tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm2/V s, about 106, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.
KW - Aluminum
KW - Memory
KW - Nanoparticle
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=78649317609&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649317609&partnerID=8YFLogxK
U2 - 10.1016/j.solidstatesciences.2010.08.008
DO - 10.1016/j.solidstatesciences.2010.08.008
M3 - Article
AN - SCOPUS:78649317609
VL - 12
SP - 1966
EP - 1969
JO - Solid State Sciences
JF - Solid State Sciences
SN - 1293-2558
IS - 12
ER -