Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalNanoscale Research Letters
Volume6
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Thin film transistors
floating
transistors
plastics
Plastics
Data storage equipment
thin films
Fabrication
fabrication
Electron mobility
Threshold voltage
electron mobility
threshold voltage
Oxides
flexibility
Electronic equipment
Nanoparticles
nanoparticles
Temperature
cycles

Keywords

  • Flexible devices
  • Low temperature
  • Nanoparticles
  • Non-volatile memory
  • Thin-film transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics. / Park, Byoungjun; Cho, Kyoungah; Kim, Sungsu; Kim, Sangsig.

In: Nanoscale Research Letters, Vol. 6, No. 1, 01.01.2011, p. 1-4.

Research output: Contribution to journalArticle

@article{18b8224636bf4ae5bd108e9f2c57c37f,
title = "Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics",
abstract = "Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.",
keywords = "Flexible devices, Low temperature, Nanoparticles, Non-volatile memory, Thin-film transistors",
author = "Byoungjun Park and Kyoungah Cho and Sungsu Kim and Sangsig Kim",
year = "2011",
month = "1",
day = "1",
doi = "10.1007/s11671-010-9789-5",
language = "English",
volume = "6",
pages = "1--4",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
number = "1",

}

TY - JOUR

T1 - Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

AU - Park, Byoungjun

AU - Cho, Kyoungah

AU - Kim, Sungsu

AU - Kim, Sangsig

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

AB - Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

KW - Flexible devices

KW - Low temperature

KW - Nanoparticles

KW - Non-volatile memory

KW - Thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=79952705179&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952705179&partnerID=8YFLogxK

U2 - 10.1007/s11671-010-9789-5

DO - 10.1007/s11671-010-9789-5

M3 - Article

AN - SCOPUS:79952705179

VL - 6

SP - 1

EP - 4

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

SN - 1931-7573

IS - 1

ER -