TY - JOUR
T1 - Nano-floating gate memory devices composed of ZnO thin-film transistors on flexible plastics
AU - Park, Byoungjun
AU - Cho, Kyoungah
AU - Kim, Sungsu
AU - Kim, Sangsig
N1 - Funding Information:
This work was supported by the National Science Council of Taiwan through grant numbers 96-2119-M-390-001, 97-2112-M-390-003, and 98-2112-M-390-003.
PY - 2012
Y1 - 2012
N2 - Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.
AB - Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.
UR - http://www.scopus.com/inward/record.url?scp=84862954679&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862954679&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-7-41
DO - 10.1186/1556-276X-7-41
M3 - Article
C2 - 22221770
AN - SCOPUS:84862954679
VL - 7
SP - 1
EP - 4
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
SN - 1931-7573
M1 - 41
ER -