Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching

Semi Oh, Pei Chen Su, Yong Jin Yoon, Soohaeng Cho, Joon Ho Oh, Tae Yeon Seong, Kyoung Kook Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We propose a dual-layer transparent Indium Tin Oxide (ITO) top electrode scheme and demonstrate the enhancement of the optical output power of GaN-based light emitting diodes (LEDs). The proposed dual-layer structure is composed of a layer with randomly distributed sphere-like nano-patterns obtained solely by a maskless wet etching process and a preannealed bottom layer to maintain current spreading of the electrode. It was observed that the surface morphologies and optoelectronic properties are dependent on etching duration. This electrode significantly improves the optical output power of GaN-based LEDs with an enhancement factor of 2.18 at 100 mA without degradation in electrical property when compared to a reference LED.

Original languageEnglish
JournalOptics Express
Volume21
Issue number22
DOIs
Publication statusPublished - 2013 Nov 4

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indium oxides
tin oxides
brightness
light emitting diodes
etching
electrodes
augmentation
output
electrical properties
degradation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching. / Oh, Semi; Su, Pei Chen; Yoon, Yong Jin; Cho, Soohaeng; Oh, Joon Ho; Seong, Tae Yeon; Kim, Kyoung Kook.

In: Optics Express, Vol. 21, No. 22, 04.11.2013.

Research output: Contribution to journalArticle

Oh, Semi ; Su, Pei Chen ; Yoon, Yong Jin ; Cho, Soohaeng ; Oh, Joon Ho ; Seong, Tae Yeon ; Kim, Kyoung Kook. / Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching. In: Optics Express. 2013 ; Vol. 21, No. 22.
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