Nano-scale structures of a one-dimensional junction

H. Kim; J. Lee; Y. J. Song; B. Y. Choi; S. J. Kahng; Y. Kuk

doi:10.1016/j.tsf.2004.06.042

Nano-scale structures of a one-dimensional junction

H. Kim, J. Lee, Y. J. Song, B. Y. Choi, S. J. Kahng, Y. Kuk

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We studied the atomic and electronic structures of a one-dimensional (1-D) junction with low temperature scanning tunneling microscopy (STM). The junction smoothly connects two parts of single wall carbon nanotubes (CNTs) introducing defect structures. The two parts of the carbon nanotube are both semiconducting with the measured band gaps of 0.92 and 0.80 eV. In order to map out detailed electronic structures, we performed scanning tunneling spectroscopy (STS) measurement at the selected positions on the axis of carbon nanotubes. We observed gap states localized near the junction.

Original language	English
Pages (from-to)	335-337
Number of pages	3
Journal	Thin Solid Films
Volume	464-465
DOIs	https://doi.org/10.1016/j.tsf.2004.06.042
Publication status	Published - 2004 Oct

Keywords

Carbon nanotubes
Nano-scale structures
One-dimensional junction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2004.06.042

Cite this

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title = "Nano-scale structures of a one-dimensional junction",

abstract = "We studied the atomic and electronic structures of a one-dimensional (1-D) junction with low temperature scanning tunneling microscopy (STM). The junction smoothly connects two parts of single wall carbon nanotubes (CNTs) introducing defect structures. The two parts of the carbon nanotube are both semiconducting with the measured band gaps of 0.92 and 0.80 eV. In order to map out detailed electronic structures, we performed scanning tunneling spectroscopy (STS) measurement at the selected positions on the axis of carbon nanotubes. We observed gap states localized near the junction.",

keywords = "Carbon nanotubes, Nano-scale structures, One-dimensional junction",

author = "H. Kim and J. Lee and Song, {Y. J.} and Choi, {B. Y.} and Kahng, {S. J.} and Y. Kuk",

note = "Funding Information: We acknowledge financial support by the Ministry of Science and Technology of Korea (National Creative Research Initiatives and National R&D Project for Nano-Science and Technology), by Ministry of Commerce, Industry and Energy of Korea (Nano-Standard Project), and by the Korea University Grant. ",

year = "2004",

month = oct,

doi = "10.1016/j.tsf.2004.06.042",

language = "English",

volume = "464-465",

pages = "335--337",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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TY - JOUR

T1 - Nano-scale structures of a one-dimensional junction

AU - Kim, H.

AU - Lee, J.

AU - Song, Y. J.

AU - Choi, B. Y.

AU - Kahng, S. J.

AU - Kuk, Y.

N1 - Funding Information: We acknowledge financial support by the Ministry of Science and Technology of Korea (National Creative Research Initiatives and National R&D Project for Nano-Science and Technology), by Ministry of Commerce, Industry and Energy of Korea (Nano-Standard Project), and by the Korea University Grant.

PY - 2004/10

Y1 - 2004/10

N2 - We studied the atomic and electronic structures of a one-dimensional (1-D) junction with low temperature scanning tunneling microscopy (STM). The junction smoothly connects two parts of single wall carbon nanotubes (CNTs) introducing defect structures. The two parts of the carbon nanotube are both semiconducting with the measured band gaps of 0.92 and 0.80 eV. In order to map out detailed electronic structures, we performed scanning tunneling spectroscopy (STS) measurement at the selected positions on the axis of carbon nanotubes. We observed gap states localized near the junction.

AB - We studied the atomic and electronic structures of a one-dimensional (1-D) junction with low temperature scanning tunneling microscopy (STM). The junction smoothly connects two parts of single wall carbon nanotubes (CNTs) introducing defect structures. The two parts of the carbon nanotube are both semiconducting with the measured band gaps of 0.92 and 0.80 eV. In order to map out detailed electronic structures, we performed scanning tunneling spectroscopy (STS) measurement at the selected positions on the axis of carbon nanotubes. We observed gap states localized near the junction.

KW - Carbon nanotubes

KW - Nano-scale structures

KW - One-dimensional junction

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U2 - 10.1016/j.tsf.2004.06.042

DO - 10.1016/j.tsf.2004.06.042

M3 - Article

AN - SCOPUS:4544324520

VL - 464-465

SP - 335

EP - 337

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Nano-scale structures of a one-dimensional junction

Abstract

Keywords

ASJC Scopus subject areas

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