Nanocrystal-based complementary inverters constructed on flexible plastic substrates

Jaewon Jang, Kyoungah Cho, Junggwon Yun, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

We demonstrate a nanocrystal (NC)-based complementary inverter constructed on a flexible plastic substrate. The NC-based complementary inverter consists of n-type HgSe NC- and p-type HgTe NC-based thin-film transistors (TFTs). Solid films on a plastic substrate obtained from HgSe and HgTe nanocrystals by thermal transformation are utilized as the n- and p-channel layers in these TFTs, respectively. The electrical properties of these component TFTs on unstrained and strained substrates are characterized and the performance of the inverter on the flexible substrate is investigated. The inverter on the unstrained substrate exhibits a logic gain of about 8, a logic swing of 90%, and a noise margin of 2.0 V. The characteristics of the inverter are changed under tensile and compressive strains, but not very significantly. Moreover, a comparison of the electrical characteristics of the n- and p-channel TFTs and the inverter is made in this paper.

Original languageEnglish
Pages (from-to)3597-3601
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number5
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

inverters
Nanoparticles
Nanocrystals
Plastics
Thin film transistors
nanocrystals
plastics
transistors
Substrates
thin films
logic
Noise
margins
Electric properties
Hot Temperature
electrical properties

Keywords

  • Complementary.
  • Flexible
  • HgSe
  • HgTe
  • Inverter
  • Logic
  • Nanocrystals
  • Thin Film Transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Nanocrystal-based complementary inverters constructed on flexible plastic substrates. / Jang, Jaewon; Cho, Kyoungah; Yun, Junggwon; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 5, 01.05.2013, p. 3597-3601.

Research output: Contribution to journalArticle

@article{bb2349781e724beb8925eae400abedc3,
title = "Nanocrystal-based complementary inverters constructed on flexible plastic substrates",
abstract = "We demonstrate a nanocrystal (NC)-based complementary inverter constructed on a flexible plastic substrate. The NC-based complementary inverter consists of n-type HgSe NC- and p-type HgTe NC-based thin-film transistors (TFTs). Solid films on a plastic substrate obtained from HgSe and HgTe nanocrystals by thermal transformation are utilized as the n- and p-channel layers in these TFTs, respectively. The electrical properties of these component TFTs on unstrained and strained substrates are characterized and the performance of the inverter on the flexible substrate is investigated. The inverter on the unstrained substrate exhibits a logic gain of about 8, a logic swing of 90{\%}, and a noise margin of 2.0 V. The characteristics of the inverter are changed under tensile and compressive strains, but not very significantly. Moreover, a comparison of the electrical characteristics of the n- and p-channel TFTs and the inverter is made in this paper.",
keywords = "Complementary., Flexible, HgSe, HgTe, Inverter, Logic, Nanocrystals, Thin Film Transistor",
author = "Jaewon Jang and Kyoungah Cho and Junggwon Yun and Sangsig Kim",
year = "2013",
month = "5",
day = "1",
doi = "10.1166/jnn.2013.7236",
language = "English",
volume = "13",
pages = "3597--3601",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "5",

}

TY - JOUR

T1 - Nanocrystal-based complementary inverters constructed on flexible plastic substrates

AU - Jang, Jaewon

AU - Cho, Kyoungah

AU - Yun, Junggwon

AU - Kim, Sangsig

PY - 2013/5/1

Y1 - 2013/5/1

N2 - We demonstrate a nanocrystal (NC)-based complementary inverter constructed on a flexible plastic substrate. The NC-based complementary inverter consists of n-type HgSe NC- and p-type HgTe NC-based thin-film transistors (TFTs). Solid films on a plastic substrate obtained from HgSe and HgTe nanocrystals by thermal transformation are utilized as the n- and p-channel layers in these TFTs, respectively. The electrical properties of these component TFTs on unstrained and strained substrates are characterized and the performance of the inverter on the flexible substrate is investigated. The inverter on the unstrained substrate exhibits a logic gain of about 8, a logic swing of 90%, and a noise margin of 2.0 V. The characteristics of the inverter are changed under tensile and compressive strains, but not very significantly. Moreover, a comparison of the electrical characteristics of the n- and p-channel TFTs and the inverter is made in this paper.

AB - We demonstrate a nanocrystal (NC)-based complementary inverter constructed on a flexible plastic substrate. The NC-based complementary inverter consists of n-type HgSe NC- and p-type HgTe NC-based thin-film transistors (TFTs). Solid films on a plastic substrate obtained from HgSe and HgTe nanocrystals by thermal transformation are utilized as the n- and p-channel layers in these TFTs, respectively. The electrical properties of these component TFTs on unstrained and strained substrates are characterized and the performance of the inverter on the flexible substrate is investigated. The inverter on the unstrained substrate exhibits a logic gain of about 8, a logic swing of 90%, and a noise margin of 2.0 V. The characteristics of the inverter are changed under tensile and compressive strains, but not very significantly. Moreover, a comparison of the electrical characteristics of the n- and p-channel TFTs and the inverter is made in this paper.

KW - Complementary.

KW - Flexible

KW - HgSe

KW - HgTe

KW - Inverter

KW - Logic

KW - Nanocrystals

KW - Thin Film Transistor

UR - http://www.scopus.com/inward/record.url?scp=84876938172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876938172&partnerID=8YFLogxK

U2 - 10.1166/jnn.2013.7236

DO - 10.1166/jnn.2013.7236

M3 - Article

C2 - 23858910

VL - 13

SP - 3597

EP - 3601

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 5

ER -