Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 μm

Jung H. Shin, Kwan Sik Cho, Ji Hong Jhe, Gun Yong Sung, Baek Hyun Kim, Seong Ju Park

Research output: Contribution to journalConference article

Abstract

Nanocrystal Si (nc-Si) sensitization of Er in a silica matrix to obtain high optical activity in a Si-compatible material is investigated. Er-doped silicon-rich silicon oxide (SRSO) films, which consist of nc-Si embeddded inside an SiO2 matrix, were deposited by electron-cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) using SiH4 and O2 with concurrent sputtering of Er followed by a high temperature anneal. For comparison, Er-free SRSO films were also deposited. Detailed investigation of processing conditions indicates that an annealing process consisting of 30 min anneal at 950°C without hydrogenation to be optimum for activation of Er. Investigation of MOS diode structure with Er-doped and Er-free SRSO films indicates that a mesa-type structure with n+ poly-silicon top contact, p-type substrate, and SRSO Si content of less than 40 % gives the best diode performance. Er-free SRSO diodes fabricated using the optimum conditions show electroluminescence under forward bias. Er-doped SRSO diodes show photoresponse at 1.54 μm due to nanocrystal - Er interactions, showing the promise of developing integrated, Si-based 1.54 μm light detectors for integrated microphotonic devices.

Original languageEnglish
Pages (from-to)31-39
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5359
DOIs
Publication statusPublished - 2004 Sep 13
Externally publishedYes

Fingerprint

Optical Materials
Optical materials
Nanocrystals
Silicon
optical materials
Silica
Silicon Dioxide
Silicon oxides
silicon oxides
nanocrystals
silicon dioxide
silicon
Diodes
diodes
Oxides
Oxide films
oxide films
Diode
Electron cyclotron resonance
optical activity

Keywords

  • Erbium
  • Microphotonics
  • Optoelectronics
  • Si nanocrystal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 μm. / Shin, Jung H.; Cho, Kwan Sik; Jhe, Ji Hong; Sung, Gun Yong; Kim, Baek Hyun; Park, Seong Ju.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5359, 13.09.2004, p. 31-39.

Research output: Contribution to journalConference article

Shin, Jung H. ; Cho, Kwan Sik ; Jhe, Ji Hong ; Sung, Gun Yong ; Kim, Baek Hyun ; Park, Seong Ju. / Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 μm. In: Proceedings of SPIE - The International Society for Optical Engineering. 2004 ; Vol. 5359. pp. 31-39.
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AU - Kim, Baek Hyun

AU - Park, Seong Ju

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AB - Nanocrystal Si (nc-Si) sensitization of Er in a silica matrix to obtain high optical activity in a Si-compatible material is investigated. Er-doped silicon-rich silicon oxide (SRSO) films, which consist of nc-Si embeddded inside an SiO2 matrix, were deposited by electron-cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) using SiH4 and O2 with concurrent sputtering of Er followed by a high temperature anneal. For comparison, Er-free SRSO films were also deposited. Detailed investigation of processing conditions indicates that an annealing process consisting of 30 min anneal at 950°C without hydrogenation to be optimum for activation of Er. Investigation of MOS diode structure with Er-doped and Er-free SRSO films indicates that a mesa-type structure with n+ poly-silicon top contact, p-type substrate, and SRSO Si content of less than 40 % gives the best diode performance. Er-free SRSO diodes fabricated using the optimum conditions show electroluminescence under forward bias. Er-doped SRSO diodes show photoresponse at 1.54 μm due to nanocrystal - Er interactions, showing the promise of developing integrated, Si-based 1.54 μm light detectors for integrated microphotonic devices.

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