Nanocrystalline GaZnO films for transparent electrode to silicon carbide

Jungho Lee, Ji Hong Kim, Kang Min Do, Byung-Moo Moon, Ji Hoon Lee, Sang Mo Koo

Research output: Contribution to journalArticle

Abstract

Nanocrystalline 2% Ga doped zinc oxide (GaZnO) thin films were epitaxially deposited on n-type 4H-SiC (0001) by a pulsed laser deposition (PLD) at different substrate temperatures of 250, 400, and 550 °C, respectively. Structural and electrical properties of nanocrystalline GaZnO thin film on 4H-SiC were investigated by using X-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, transmission line method (TLM), and Auger electron spectroscopy (AES). The nanocrystalline GaZnO film deposited at 400 °C show the lowest resistivity of 3.3×10 -4 Ωcm, and highly c-axis oriented crystalline quality with being sharper and higher diffraction angle, which result in. The specific contact resistance (ρ c), measured from the Au/Ti/GaZnO/SiC of ∼0.05 Ω cm 2. The relative amount of activated Ga 3+ ions was 2.02% in GaZnO film by AES measurement.

Original languageEnglish
Pages (from-to)260-264
Number of pages5
JournalJournal of Nanoelectronics and Optoelectronics
Volume7
Issue number3
DOIs
Publication statusPublished - 2012 Jul 16

Keywords

  • AES
  • GaZnO
  • PLD
  • SiC
  • XRD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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