Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces

Yong Kwan Kim, Jae Hyun Park, Gun Chul Shin, Jeong Sook Ha, So Jeong Park, Seong Min Yi, Gyu-Tae Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.

Original languageEnglish
Article number113
Pages (from-to)560-564
Number of pages5
JournalJournal of Physics: Conference Series
Volume61
Issue number1
DOIs
Publication statusPublished - 2007 Apr 1

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nanofabrication
nanowires
etchants
metal films
printing
electrical measurement
passivity
adsorption
oxides

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces. / Kim, Yong Kwan; Park, Jae Hyun; Shin, Gun Chul; Ha, Jeong Sook; Park, So Jeong; Yi, Seong Min; Kim, Gyu-Tae.

In: Journal of Physics: Conference Series, Vol. 61, No. 1, 113, 01.04.2007, p. 560-564.

Research output: Contribution to journalArticle

Kim, Yong Kwan ; Park, Jae Hyun ; Shin, Gun Chul ; Ha, Jeong Sook ; Park, So Jeong ; Yi, Seong Min ; Kim, Gyu-Tae. / Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces. In: Journal of Physics: Conference Series. 2007 ; Vol. 61, No. 1. pp. 560-564.
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