Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces

Yong Kwan Kim; Jae Hyun Park; Gun Chul Shin; Jeong Sook Ha; So Jeong Park; Seong Min Yi; Gyu Tae Kim

doi:10.1088/1742-6596/61/1/113

Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO₂ surfaces

Yong Kwan Kim, Jae Hyun Park, Gun Chul Shin, Jeong Sook Ha, So Jeong Park, Seong Min Yi, Gyu Tae Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO₂ substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V₂O₅ nanowires. In particular, the electrical measurement of the patterned V₂O₅ nanowire network showed the semiconducting non-ohmic behavior in the channel.

Original language	English
Article number	113
Pages (from-to)	560-564
Number of pages	5
Journal	Journal of Physics: Conference Series
Volume	61
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/61/1/113
Publication status	Published - 2007 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces",

abstract = "Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.",

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AU - Kim, Yong Kwan

AU - Park, Jae Hyun

AU - Shin, Gun Chul

AU - Ha, Jeong Sook

AU - Park, So Jeong

AU - Yi, Seong Min

AU - Kim, Gyu Tae

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N2 - Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.

AB - Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.

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ER -

Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO₂ surfaces

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