Abstract
Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.
| Original language | English |
|---|---|
| Article number | 113 |
| Pages (from-to) | 560-564 |
| Number of pages | 5 |
| Journal | Journal of Physics: Conference Series |
| Volume | 61 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 Apr 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces. / Kim, Yong Kwan; Park, Jae Hyun; Shin, Gun Chul; Ha, Jeong Sook; Park, So Jeong; Yi, Seong Min; Kim, Gyu-Tae.
In: Journal of Physics: Conference Series, Vol. 61, No. 1, 113, 01.04.2007, p. 560-564.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces
AU - Kim, Yong Kwan
AU - Park, Jae Hyun
AU - Shin, Gun Chul
AU - Ha, Jeong Sook
AU - Park, So Jeong
AU - Yi, Seong Min
AU - Kim, Gyu-Tae
PY - 2007/4/1
Y1 - 2007/4/1
N2 - Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.
AB - Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.
UR - http://www.scopus.com/inward/record.url?scp=34247538059&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34247538059&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/61/1/113
DO - 10.1088/1742-6596/61/1/113
M3 - Article
AN - SCOPUS:34247538059
VL - 61
SP - 560
EP - 564
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 113
ER -