Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO2 surfaces

Yong Kwan Kim; Jae Hyun Park; Gun Chul Shin; Jeong Sook Ha; So Jeong Park; Seong Min Yi; Gyu-Tae Kim

doi:10.1088/1742-6596/61/1/113

Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO₂ surfaces

Yong Kwan Kim, Jae Hyun Park, Gun Chul Shin, Jeong Sook Ha, So Jeong Park, Seong Min Yi, Gyu-Tae Kim

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO₂ substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V₂O₅ nanowires. In particular, the electrical measurement of the patterned V₂O₅ nanowire network showed the semiconducting non-ohmic behavior in the channel.

Original language	English
Article number	113
Pages (from-to)	560-564
Number of pages	5
Journal	Journal of Physics: Conference Series
Volume	61
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/61/1/113
Publication status	Published - 2007 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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Kim, Y. K., Park, J. H., Shin, G. C., Ha, J. S., Park, S. J., Yi, S. M., & Kim, G-T. (2007). Nanofabrication via direct transfer of BOE treated PDMS stamp patterns onto SiO₂ surfaces. Journal of Physics: Conference Series, 61(1), 560-564. [113]. https://doi.org/10.1088/1742-6596/61/1/113

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abstract = "Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.",

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