Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range

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30 Citations (Scopus)

Abstract

Co-Fe-Al-O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O2 atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4πMS) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.

Original languageEnglish
Pages (from-to)1500-1502
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
DOIs
Publication statusPublished - 2004 May 1

Fingerprint

Ferromagnetic resonance
Magnetostriction
Saturation magnetization
Magnetron sputtering
Magnetic properties
Anisotropy
frequency ranges
Magnetic fields
saturation
Thin films
ferromagnetic resonance
thin films
magnetostriction
magnetron sputtering
permeability
magnetic properties
atmospheres
magnetization
anisotropy
electrical resistivity

Keywords

  • Co-Fe-Al-O nanogranular film
  • Ferromagnetic resonance frequency
  • Magnetoelastic device
  • Magnetostriction

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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title = "Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range",
abstract = "Co-Fe-Al-O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O2 atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4πMS) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.",
keywords = "Co-Fe-Al-O nanogranular film, Ferromagnetic resonance frequency, Magnetoelastic device, Magnetostriction",
author = "Sohn, {J. C.} and Byun, {Dong Jin} and Lim, {Sang Ho}",
year = "2004",
month = "5",
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doi = "10.1016/j.jmmm.2003.12.1009",
language = "English",
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TY - JOUR

T1 - Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range

AU - Sohn, J. C.

AU - Byun, Dong Jin

AU - Lim, Sang Ho

PY - 2004/5/1

Y1 - 2004/5/1

N2 - Co-Fe-Al-O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O2 atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4πMS) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.

AB - Co-Fe-Al-O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O2 atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4πMS) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.

KW - Co-Fe-Al-O nanogranular film

KW - Ferromagnetic resonance frequency

KW - Magnetoelastic device

KW - Magnetostriction

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