Abstract
Today semiconducting metal oxide (SMOX) based gas sensors are used in a wide array of applications. Dopants, e.g., rhodium, are often used to change the sensor response of SMOXs. The adjustment of sensing characteristics with dopants is usually done empirically, and there is a knowledge gap surrounding how the presence of dopants alters the chemistry of sensing. Here using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), dc resistance measurements, and operando diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy, it was understood how surface loading with Rh2O3 changes sensing with WO3. As a result of uniform surface loading, reactions between the Rh2O3 clusters and the analyte gas dominate the reception. Changes in the p-n heterojunction between Rh2O3 and WO3 are responsible for the transduction. These results in combination with existing literature indicate that, through controlled surface doping, it is possible to intentionally tune the sensor characteristics of SMOXs.
| Original language | English |
|---|---|
| Journal | Journal of Physical Chemistry C |
| Volume | 121 |
| Issue number | 39 |
| DOIs | |
| Publication status | Published - 2017 Jan 1 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
Cite this
Nanolevel control of gas sensing characteristics via p-n heterojunction between Rh2O3 clusters and WO3 crystallites. / Staerz, Anna; Kim, Tae Hyung; Lee, Jong Heun; Weimar, Udo; Barsan, Nicolae.
In: Journal of Physical Chemistry C, Vol. 121, No. 39, 01.01.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanolevel control of gas sensing characteristics via p-n heterojunction between Rh2O3 clusters and WO3 crystallites
AU - Staerz, Anna
AU - Kim, Tae Hyung
AU - Lee, Jong Heun
AU - Weimar, Udo
AU - Barsan, Nicolae
PY - 2017/1/1
Y1 - 2017/1/1
N2 - Today semiconducting metal oxide (SMOX) based gas sensors are used in a wide array of applications. Dopants, e.g., rhodium, are often used to change the sensor response of SMOXs. The adjustment of sensing characteristics with dopants is usually done empirically, and there is a knowledge gap surrounding how the presence of dopants alters the chemistry of sensing. Here using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), dc resistance measurements, and operando diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy, it was understood how surface loading with Rh2O3 changes sensing with WO3. As a result of uniform surface loading, reactions between the Rh2O3 clusters and the analyte gas dominate the reception. Changes in the p-n heterojunction between Rh2O3 and WO3 are responsible for the transduction. These results in combination with existing literature indicate that, through controlled surface doping, it is possible to intentionally tune the sensor characteristics of SMOXs.
AB - Today semiconducting metal oxide (SMOX) based gas sensors are used in a wide array of applications. Dopants, e.g., rhodium, are often used to change the sensor response of SMOXs. The adjustment of sensing characteristics with dopants is usually done empirically, and there is a knowledge gap surrounding how the presence of dopants alters the chemistry of sensing. Here using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), dc resistance measurements, and operando diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy, it was understood how surface loading with Rh2O3 changes sensing with WO3. As a result of uniform surface loading, reactions between the Rh2O3 clusters and the analyte gas dominate the reception. Changes in the p-n heterojunction between Rh2O3 and WO3 are responsible for the transduction. These results in combination with existing literature indicate that, through controlled surface doping, it is possible to intentionally tune the sensor characteristics of SMOXs.
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UR - http://www.scopus.com/inward/citedby.url?scp=85032721875&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.7b09316
DO - 10.1021/acs.jpcc.7b09316
M3 - Article
AN - SCOPUS:85032721875
VL - 121
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 39
ER -