Nanometer scale selective etching of Si(111) surface using silicon nitride islands

Jeong Sook Ha, Kang Ho Park, Wan Soo Yun, El Hang Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Formation of silicon nanopillars via selective oxygen etching of Si(111) surface using silicon nitride islands in the initial stage of nitridation was investigated by scanning tunneling microscopy and low energy electron diffraction. Silicon nitride islands with diameters of 6-15 nm, which were formed by Low energy nitrogen ions, were resistive to O 2 exposure at high temperatures resulting in silicon nanopillars as high as 2-3 nm. Existence of high density silicon nitride islands is considered to suppress the step flow etching of nearby silicon surfaces, resulting in a spatially nonuniform etching of silicon.

Original languageEnglish
Pages (from-to)2806-2810
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number5
Publication statusPublished - 1998 Sep 1
Externally publishedYes

Fingerprint

Silicon nitride
silicon nitrides
Etching
etching
Silicon
silicon
Nitridation
Low energy electron diffraction
nitrogen ions
Scanning tunneling microscopy
scanning tunneling microscopy
electron diffraction
Nitrogen
Oxygen
energy
Ions
oxygen
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Nanometer scale selective etching of Si(111) surface using silicon nitride islands. / Ha, Jeong Sook; Park, Kang Ho; Yun, Wan Soo; Lee, El Hang.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 5, 01.09.1998, p. 2806-2810.

Research output: Contribution to journalArticle

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