Nanoparticle-based flexible inverters with a vertical structure

Junggwon Yun, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the construction and characterization of a representative vertical inverter with a nanoparticle (NP)-based p-channel thin-film transistor (TFT) and a NP-based n-channel TFT on a flexible substrate. The vertical inverter consists of a p-type HgTe NP-based TFT on the first-stair layer and an n-type HgSe NP-based TFT on the second-stair layer. In the vertical inverter, an isolation layer made of polyvinyl alcohol prevents the cross talk between these TFTs. The vertical inverter exhibits the typical inverter characteristics with a gain of 4, and the reproducible operation was obtained in the upward and downward bending states, as well as in the flat state. Moreover, the inverter characteristics were maintained even after 1000 bending cycles with 0.7% strain.

Original languageEnglish
Pages (from-to)256-259
Number of pages4
JournalThin Solid Films
Volume539
DOIs
Publication statusPublished - 2013 Jul 31

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Keywords

  • Electronic circuits
  • Flexible substrate
  • II-VI semiconductors
  • Nanocrystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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