Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes

Joon Seop Kwak, J. O. Song, T. Y. Seong, B. I. Kim, J. Cho, C. Sone, Y. Park

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10 -5-10 -6 Ωcm 2 when annealed at temperatures of 330-530°C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.

Original languageEnglish
Pages (from-to)3547-3550
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume6
Issue number11
DOIs
Publication statusPublished - 2006 Nov

Keywords

  • GaN
  • Light emitting diode
  • Nanoparticle
  • Ohmic contacts

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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