Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

Dae Woo Jeon, Won Mook Choi, Hyeon Jin Shin, Seon Mi Yoon, Jae Young Choi, Lee Woon Jang, In-Hwan Lee

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

InGaN/GaN nanopillar light-emitting diodes (LEDs) were fabricated using a highly homogeneous multilayer graphene (h-MLG) electrode. Four layers of h-MLG were prepared homogeneously using chemical vapor deposition and layer-by-layer transfer methods. The h-MLG exhibited excellent optical, structural and electrical properties for use as an electrode in the LEDs. The h-MLG was applied as a transparent top electrode by suspending only on the tip of nanopillar LEDs. The current-driven InGaN/GaN nanopillar LED with the h-MLG electrode was successfully operated at a high current injection and exhibited bright electroluminescence.

Original languageEnglish
Pages (from-to)17688-17692
Number of pages5
JournalJournal of Materials Chemistry
Volume21
Issue number44
DOIs
Publication statusPublished - 2011 Nov 28
Externally publishedYes

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Graphene
Light emitting diodes
Multilayers
Electrodes
Electroluminescence
Structural properties
Chemical vapor deposition
Electric properties
Optical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes. / Jeon, Dae Woo; Choi, Won Mook; Shin, Hyeon Jin; Yoon, Seon Mi; Choi, Jae Young; Jang, Lee Woon; Lee, In-Hwan.

In: Journal of Materials Chemistry, Vol. 21, No. 44, 28.11.2011, p. 17688-17692.

Research output: Contribution to journalArticle

Jeon, Dae Woo ; Choi, Won Mook ; Shin, Hyeon Jin ; Yoon, Seon Mi ; Choi, Jae Young ; Jang, Lee Woon ; Lee, In-Hwan. / Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes. In: Journal of Materials Chemistry. 2011 ; Vol. 21, No. 44. pp. 17688-17692.
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