Nanoporous silicon oxide memory

Gunuk Wang, Yang Yang, Jae Hwang Lee, Vera Abramova, Huilong Fei, Gedeng Ruan, Edwin L. Thomas, James M. Tour

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiO x ) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiO x memory exhibited an extremely low electroforming voltage (∼1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10 7 A), a long high-temperature lifetime (≥10 4 s at 100 °C), excellent cycling endurance (≥10 5 ), sub-50 ns switching speeds, and low power consumption (∼6 × 10 -5 W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiO x RRAM provide a route toward easily accessed nonvolatile memory applications.

Original languageEnglish
Pages (from-to)4694-4699
Number of pages6
JournalNano Letters
Volume14
Issue number8
DOIs
Publication statusPublished - 2014 Aug 13
Externally publishedYes

Fingerprint

Silicon oxides
silicon oxides
random access memory
electroforming
Data storage equipment
Electroforming
endurance
low voltage
filaments
routes
Computer terminals
life (durability)
Electric potential
cycles
fabrication
oxides
electric potential
room temperature
Oxides
Durability

Keywords

  • Nanoporous
  • nonvolatile memory
  • resistive memory
  • silicon oxide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Wang, G., Yang, Y., Lee, J. H., Abramova, V., Fei, H., Ruan, G., ... Tour, J. M. (2014). Nanoporous silicon oxide memory. Nano Letters, 14(8), 4694-4699. https://doi.org/10.1021/nl501803s

Nanoporous silicon oxide memory. / Wang, Gunuk; Yang, Yang; Lee, Jae Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L.; Tour, James M.

In: Nano Letters, Vol. 14, No. 8, 13.08.2014, p. 4694-4699.

Research output: Contribution to journalArticle

Wang, G, Yang, Y, Lee, JH, Abramova, V, Fei, H, Ruan, G, Thomas, EL & Tour, JM 2014, 'Nanoporous silicon oxide memory', Nano Letters, vol. 14, no. 8, pp. 4694-4699. https://doi.org/10.1021/nl501803s
Wang G, Yang Y, Lee JH, Abramova V, Fei H, Ruan G et al. Nanoporous silicon oxide memory. Nano Letters. 2014 Aug 13;14(8):4694-4699. https://doi.org/10.1021/nl501803s
Wang, Gunuk ; Yang, Yang ; Lee, Jae Hwang ; Abramova, Vera ; Fei, Huilong ; Ruan, Gedeng ; Thomas, Edwin L. ; Tour, James M. / Nanoporous silicon oxide memory. In: Nano Letters. 2014 ; Vol. 14, No. 8. pp. 4694-4699.
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