Nanoporous silicon oxide memory

Gunuk Wang, Yang Yang, Jae Hwang Lee, Vera Abramova, Huilong Fei, Gedeng Ruan, Edwin L. Thomas, James M. Tour

Research output: Contribution to journalArticlepeer-review

50 Citations (Scopus)


Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiO x ) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiO x memory exhibited an extremely low electroforming voltage (∼1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10 7 A), a long high-temperature lifetime (≥10 4 s at 100 °C), excellent cycling endurance (≥10 5 ), sub-50 ns switching speeds, and low power consumption (∼6 × 10 -5 W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiO x RRAM provide a route toward easily accessed nonvolatile memory applications.

Original languageEnglish
Pages (from-to)4694-4699
Number of pages6
JournalNano Letters
Issue number8
Publication statusPublished - 2014 Aug 13
Externally publishedYes


  • Nanoporous
  • nonvolatile memory
  • resistive memory
  • silicon oxide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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