Nanoporous silicon oxide memory

Gunuk Wang, Yang Yang, Jae Hwang Lee, Vera Abramova, Huilong Fei, Gedeng Ruan, Edwin L. Thomas, James M. Tour

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)

Abstract

Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 107 A), a long high-temperature lifetime (≥10 4 s at 100 °C), excellent cycling endurance (≥105), sub-50 ns switching speeds, and low power consumption (∼6 × 10 -5 W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications.

Original languageEnglish
Pages (from-to)4694-4699
Number of pages6
JournalNano Letters
Volume14
Issue number8
DOIs
Publication statusPublished - 2014 Aug 13
Externally publishedYes

Keywords

  • Nanoporous
  • nonvolatile memory
  • resistive memory
  • silicon oxide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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