Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires

H. S. Jeon, C. W. Cho, C. H. Lim, B. Park, H. Ju, Sangsig Kim, S. B. Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires have been investigated. Colloidal Au nanoparticles with ∼5 nm diameters were selectively deposited onto the lithographically defined n -type Si nanowire surface by 2 min electrophoresis between the channel and the side gates. The device transfer characteristics measured at room temperature showed hysteresis, with the depletion mode cutoff voltage applied by the side gates shifted by as much as 1.5 V, with the source-drain bias at 1.4 V. The results demonstrate that the electrostatic assembly of colloidal Au nanoparticles is a useful method for the fabrication of Si nanowire based nanoscale floating-gate nonvolatile memory structures.

Original languageEnglish
Pages (from-to)3192-3195
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number6
DOIs
Publication statusPublished - 2006 Dec 11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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