Abstract
A nanosized pattern layer was formed on the front surface (glass side) of the thin film solar cell using nanoimprint lithography with a Ni based moth-eye imprint mold in order to increase the total conversion efficiency of the amorphous silicon based thin film solar cell. The imprinted pattern layer had nanosized protrusions, which suppressed the reflection of light on the glass surfaces. The nanopatterns were formed using a methacryloxypropyl terminated poly(dimethylsiloxane) (MPDMS) based hard polymeric resin. The reflectance of the thin film solar cell significantly decreased because of the nanosized structural anti-reflection layer, and the total conversion efficiency of the cell increased about 3% compared to the identical solar cell without the nanosized pattern layer. Moreover, the surface exhibited a hydrophobic nature because of the surface nanopatterns and the self-assembled monolayer coating, and this hydrophobicity provided the solar cell with a self-cleaning functionality.
| Original language | English |
|---|---|
| Article number | 020207 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Feb 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Nanosized structural anti-reflection layer for thin film solar cells. / Han, Kang Soo; Shin, Ju Hyeon; Kim, Kang In; Lee, Heon.
In: Japanese Journal of Applied Physics, Vol. 50, No. 2, 020207, 01.02.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanosized structural anti-reflection layer for thin film solar cells
AU - Han, Kang Soo
AU - Shin, Ju Hyeon
AU - Kim, Kang In
AU - Lee, Heon
PY - 2011/2/1
Y1 - 2011/2/1
N2 - A nanosized pattern layer was formed on the front surface (glass side) of the thin film solar cell using nanoimprint lithography with a Ni based moth-eye imprint mold in order to increase the total conversion efficiency of the amorphous silicon based thin film solar cell. The imprinted pattern layer had nanosized protrusions, which suppressed the reflection of light on the glass surfaces. The nanopatterns were formed using a methacryloxypropyl terminated poly(dimethylsiloxane) (MPDMS) based hard polymeric resin. The reflectance of the thin film solar cell significantly decreased because of the nanosized structural anti-reflection layer, and the total conversion efficiency of the cell increased about 3% compared to the identical solar cell without the nanosized pattern layer. Moreover, the surface exhibited a hydrophobic nature because of the surface nanopatterns and the self-assembled monolayer coating, and this hydrophobicity provided the solar cell with a self-cleaning functionality.
AB - A nanosized pattern layer was formed on the front surface (glass side) of the thin film solar cell using nanoimprint lithography with a Ni based moth-eye imprint mold in order to increase the total conversion efficiency of the amorphous silicon based thin film solar cell. The imprinted pattern layer had nanosized protrusions, which suppressed the reflection of light on the glass surfaces. The nanopatterns were formed using a methacryloxypropyl terminated poly(dimethylsiloxane) (MPDMS) based hard polymeric resin. The reflectance of the thin film solar cell significantly decreased because of the nanosized structural anti-reflection layer, and the total conversion efficiency of the cell increased about 3% compared to the identical solar cell without the nanosized pattern layer. Moreover, the surface exhibited a hydrophobic nature because of the surface nanopatterns and the self-assembled monolayer coating, and this hydrophobicity provided the solar cell with a self-cleaning functionality.
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UR - http://www.scopus.com/inward/citedby.url?scp=79951889517&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.020207
DO - 10.1143/JJAP.50.020207
M3 - Article
AN - SCOPUS:79951889517
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2
M1 - 020207
ER -