Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes

Jaehui Ahn, Hyunik Park, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.

Original languageEnglish
Pages (from-to)26006-26010
Number of pages5
JournalOptics Express
Volume19
Issue number27
Publication statusPublished - 2011 Dec 19

Fingerprint

heterojunctions
light emitting diodes
electrodes
silicon
thin films
electroluminescence
positioning
diodes
chemistry
color
electric potential
metals

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Ahn, J., Park, H., Mastro, M. A., Hite, J. K., Eddy, C. R., & Kim, J. H. (2011). Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes. Optics Express, 19(27), 26006-26010.

Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes. / Ahn, Jaehui; Park, Hyunik; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R.; Kim, Ji Hyun.

In: Optics Express, Vol. 19, No. 27, 19.12.2011, p. 26006-26010.

Research output: Contribution to journalArticle

Ahn, J, Park, H, Mastro, MA, Hite, JK, Eddy, CR & Kim, JH 2011, 'Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes', Optics Express, vol. 19, no. 27, pp. 26006-26010.
Ahn J, Park H, Mastro MA, Hite JK, Eddy CR, Kim JH. Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes. Optics Express. 2011 Dec 19;19(27):26006-26010.
Ahn, Jaehui ; Park, Hyunik ; Mastro, Michael A. ; Hite, Jennifer K. ; Eddy, Charles R. ; Kim, Ji Hyun. / Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes. In: Optics Express. 2011 ; Vol. 19, No. 27. pp. 26006-26010.
@article{4cff460fd3c84b4d93f045920455c468,
title = "Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes",
abstract = "Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.",
author = "Jaehui Ahn and Hyunik Park and Mastro, {Michael A.} and Hite, {Jennifer K.} and Eddy, {Charles R.} and Kim, {Ji Hyun}",
year = "2011",
month = "12",
day = "19",
language = "English",
volume = "19",
pages = "26006--26010",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "27",

}

TY - JOUR

T1 - Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes

AU - Ahn, Jaehui

AU - Park, Hyunik

AU - Mastro, Michael A.

AU - Hite, Jennifer K.

AU - Eddy, Charles R.

AU - Kim, Ji Hyun

PY - 2011/12/19

Y1 - 2011/12/19

N2 - Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.

AB - Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.

UR - http://www.scopus.com/inward/record.url?scp=84555197295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84555197295&partnerID=8YFLogxK

M3 - Article

C2 - 22274189

AN - SCOPUS:84555197295

VL - 19

SP - 26006

EP - 26010

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 27

ER -