Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes

Jaehui Ahn, Hyunik Park, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Ji Hyun Kim

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21 Citations (Scopus)

Abstract

Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.

Original languageEnglish
Pages (from-to)26006-26010
Number of pages5
JournalOptics Express
Volume19
Issue number27
Publication statusPublished - 2011 Dec 19

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Ahn, J., Park, H., Mastro, M. A., Hite, J. K., Eddy, C. R., & Kim, J. H. (2011). Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes. Optics Express, 19(27), 26006-26010.