Abstract
The electrical transport properties of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature in micron and sub-micron scale. Polyacetylene fiber network measured in micron scale shows weaker temperature dependence of resistivity and smaller negative magnetoresistance (MR) at T = 1.5K compared to those of bulk PA film. The reaction of all electrodes with dopant became serious in submicron experiment, so that stripes of Pt electrodes with 100nm separation were patterned on the top at the SiO2 substrate to prevent the reaction. Non-ohmic I-V characteristics are observed in PA nanofiber. The gate dependence shows the charge carrier to be hole with mobility μFET ∼ 4.4 × 10-5 cm2/Vs at 233K. The non-ohmic I-V dependence at high electric fields could be originated fron the soliton tunneling conduction in PA nanofiber.
| Original language | English |
|---|---|
| Pages (from-to) | 53-56 |
| Number of pages | 4 |
| Journal | Synthetic Metals |
| Volume | 119 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2001 Mar 15 |
| Externally published | Yes |
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Keywords
- Electrical transport
- FET
- Nanofiber
- Polymetylene
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Polymers and Plastics
Cite this
Nanotransport in polyacetylene single fiber : Toward the intrinsic properties. / Park, J. G.; Kim, Gyu-Tae; Krstic, V.; Kim, B.; Lee, S. H.; Roth, S.; Burghard, M.; Park, Y. W.
In: Synthetic Metals, Vol. 119, No. 1-3, 15.03.2001, p. 53-56.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanotransport in polyacetylene single fiber
T2 - Toward the intrinsic properties
AU - Park, J. G.
AU - Kim, Gyu-Tae
AU - Krstic, V.
AU - Kim, B.
AU - Lee, S. H.
AU - Roth, S.
AU - Burghard, M.
AU - Park, Y. W.
PY - 2001/3/15
Y1 - 2001/3/15
N2 - The electrical transport properties of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature in micron and sub-micron scale. Polyacetylene fiber network measured in micron scale shows weaker temperature dependence of resistivity and smaller negative magnetoresistance (MR) at T = 1.5K compared to those of bulk PA film. The reaction of all electrodes with dopant became serious in submicron experiment, so that stripes of Pt electrodes with 100nm separation were patterned on the top at the SiO2 substrate to prevent the reaction. Non-ohmic I-V characteristics are observed in PA nanofiber. The gate dependence shows the charge carrier to be hole with mobility μFET ∼ 4.4 × 10-5 cm2/Vs at 233K. The non-ohmic I-V dependence at high electric fields could be originated fron the soliton tunneling conduction in PA nanofiber.
AB - The electrical transport properties of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature in micron and sub-micron scale. Polyacetylene fiber network measured in micron scale shows weaker temperature dependence of resistivity and smaller negative magnetoresistance (MR) at T = 1.5K compared to those of bulk PA film. The reaction of all electrodes with dopant became serious in submicron experiment, so that stripes of Pt electrodes with 100nm separation were patterned on the top at the SiO2 substrate to prevent the reaction. Non-ohmic I-V characteristics are observed in PA nanofiber. The gate dependence shows the charge carrier to be hole with mobility μFET ∼ 4.4 × 10-5 cm2/Vs at 233K. The non-ohmic I-V dependence at high electric fields could be originated fron the soliton tunneling conduction in PA nanofiber.
KW - Electrical transport
KW - FET
KW - Nanofiber
KW - Polymetylene
UR - http://www.scopus.com/inward/record.url?scp=0035867353&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035867353&partnerID=8YFLogxK
U2 - 10.1016/S0379-6779(00)00689-5
DO - 10.1016/S0379-6779(00)00689-5
M3 - Article
VL - 119
SP - 53
EP - 56
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
IS - 1-3
ER -