Nanotransport in polyacetylene single fiber: Toward the intrinsic properties

J. G. Park; G. T. Kim; V. Krstic; B. Kim; S. H. Lee; S. Roth; M. Burghard; Y. W. Park

doi:10.1016/S0379-6779(00)00689-5

Nanotransport in polyacetylene single fiber: Toward the intrinsic properties

J. G. Park, G. T. Kim, V. Krstic, B. Kim, S. H. Lee, S. Roth, M. Burghard, Y. W. Park

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

The electrical transport properties of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature in micron and sub-micron scale. Polyacetylene fiber network measured in micron scale shows weaker temperature dependence of resistivity and smaller negative magnetoresistance (MR) at T = 1.5K compared to those of bulk PA film. The reaction of all electrodes with dopant became serious in submicron experiment, so that stripes of Pt electrodes with 100nm separation were patterned on the top at the SiO₂ substrate to prevent the reaction. Non-ohmic I-V characteristics are observed in PA nanofiber. The gate dependence shows the charge carrier to be hole with mobility μ_FET ∼ 4.4 × 10^-5 cm²/Vs at 233K. The non-ohmic I-V dependence at high electric fields could be originated fron the soliton tunneling conduction in PA nanofiber.

Original language	English
Pages (from-to)	53-56
Number of pages	4
Journal	Synthetic Metals
Volume	119
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)00689-5
Publication status	Published - 2001 Mar 15
Externally published	Yes

Keywords

Electrical transport
FET
Nanofiber
Polymetylene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "Nanotransport in polyacetylene single fiber: Toward the intrinsic properties",

abstract = "The electrical transport properties of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature in micron and sub-micron scale. Polyacetylene fiber network measured in micron scale shows weaker temperature dependence of resistivity and smaller negative magnetoresistance (MR) at T = 1.5K compared to those of bulk PA film. The reaction of all electrodes with dopant became serious in submicron experiment, so that stripes of Pt electrodes with 100nm separation were patterned on the top at the SiO2 substrate to prevent the reaction. Non-ohmic I-V characteristics are observed in PA nanofiber. The gate dependence shows the charge carrier to be hole with mobility μFET ∼ 4.4 × 10-5 cm2/Vs at 233K. The non-ohmic I-V dependence at high electric fields could be originated fron the soliton tunneling conduction in PA nanofiber.",

keywords = "Electrical transport, FET, Nanofiber, Polymetylene",

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T2 - Toward the intrinsic properties

AU - Park, J. G.

AU - Kim, G. T.

AU - Krstic, V.

AU - Kim, B.

AU - Lee, S. H.

AU - Roth, S.

AU - Burghard, M.

AU - Park, Y. W.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - The electrical transport properties of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature in micron and sub-micron scale. Polyacetylene fiber network measured in micron scale shows weaker temperature dependence of resistivity and smaller negative magnetoresistance (MR) at T = 1.5K compared to those of bulk PA film. The reaction of all electrodes with dopant became serious in submicron experiment, so that stripes of Pt electrodes with 100nm separation were patterned on the top at the SiO2 substrate to prevent the reaction. Non-ohmic I-V characteristics are observed in PA nanofiber. The gate dependence shows the charge carrier to be hole with mobility μFET ∼ 4.4 × 10-5 cm2/Vs at 233K. The non-ohmic I-V dependence at high electric fields could be originated fron the soliton tunneling conduction in PA nanofiber.

AB - The electrical transport properties of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature in micron and sub-micron scale. Polyacetylene fiber network measured in micron scale shows weaker temperature dependence of resistivity and smaller negative magnetoresistance (MR) at T = 1.5K compared to those of bulk PA film. The reaction of all electrodes with dopant became serious in submicron experiment, so that stripes of Pt electrodes with 100nm separation were patterned on the top at the SiO2 substrate to prevent the reaction. Non-ohmic I-V characteristics are observed in PA nanofiber. The gate dependence shows the charge carrier to be hole with mobility μFET ∼ 4.4 × 10-5 cm2/Vs at 233K. The non-ohmic I-V dependence at high electric fields could be originated fron the soliton tunneling conduction in PA nanofiber.

KW - Electrical transport

KW - FET

KW - Nanofiber

KW - Polymetylene

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JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

ER -

Nanotransport in polyacetylene single fiber: Toward the intrinsic properties

Abstract

Keywords

ASJC Scopus subject areas

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