Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

Junggwon Yun; Myeongwon Lee; Youngin Jeon; Minsuk Kim; Yoonjoong Kim; Doohyeok Lim; Sangsig Kim

doi:10.1007/s12274-016-1235-2

Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

Junggwon Yun, Myeongwon Lee, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high I_on/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties. [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	3656-3662
Number of pages	7
Journal	Nano Research
Volume	9
Issue number	12
DOIs	https://doi.org/10.1007/s12274-016-1235-2
Publication status	Published - 2016 Dec 1

Keywords

bendable electronics
nanowatt operation
negative-AND (NAND) logic gates
silicon nanowires

ASJC Scopus subject areas

Materials Science(all)
Electrical and Electronic Engineering

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10.1007/s12274-016-1235-2

Cite this

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title = "Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates",

abstract = "In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high Ion/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties. [Figure not available: see fulltext.]",

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T1 - Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

AU - Yun, Junggwon

AU - Lee, Myeongwon

AU - Jeon, Youngin

AU - Kim, Minsuk

AU - Kim, Yoonjoong

AU - Lim, Doohyeok

AU - Kim, Sangsig

PY - 2016/12/1

Y1 - 2016/12/1

N2 - In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high Ion/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties. [Figure not available: see fulltext.]

AB - In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high Ion/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties. [Figure not available: see fulltext.]

KW - bendable electronics

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KW - silicon nanowires

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Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

Abstract

Keywords

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