Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications

Choong Rae Cho, Sung Hyuk Park, Byung Moo Moon, Jonas Sundqvist, Anders Hårsta, Alex Grishin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta 2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir 20 vertical capacitor yielded remnant polarization of 12 μC/cm2 and coercive field ∼20 kV/cm. Significant flat-band voltage VFB shifts with buffer layer thickness in Au/NKN/SiO 2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta 2O5/Si structure exhibited wide memory window without significant VFB deviations, low leakage currents, and rather long retention time at zero bias.

Original languageEnglish
Pages (from-to)21-30
Number of pages10
JournalIntegrated Ferroelectrics
Volume49
DOIs
Publication statusPublished - 2002

Keywords

  • Au/NKN/TaO/Si MFIS_diode
  • Ferroelectric non-volatile memory
  • NaKNbO(NKN) thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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