Native and radiation induced defects in lattice mismatched InGaAs and InGaP

N. J. Ekins-Daukes, K. Arafune, H. S. Lee, T. Sasaki, M. Yamaguchi, A. Khan, T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, M. Imaizumi, T. Ohshima, H. Itoh

Research output: Contribution to journalConference article

Abstract

The native and radiation induced defects in lattice mismatched In 0.16GaAs and In0.58Ga0.44P are investigated. Subjecting lattice mismatched In0.16GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from Deep Level Transient Spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1MeV electron irradiation is presented and compared to data from lattice mismatched In 0.56Ga0.44 devices.

Original languageEnglish
Pages (from-to)683-686
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2005
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 2005 Jan 32005 Jan 7

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Ekins-Daukes, N. J., Arafune, K., Lee, H. S., Sasaki, T., Yamaguchi, M., Khan, A., Takamoto, T., Agui, T., Kamimura, K., Kaneiwa, M., Imaizumi, M., Ohshima, T., & Itoh, H. (2005). Native and radiation induced defects in lattice mismatched InGaAs and InGaP. Conference Record of the IEEE Photovoltaic Specialists Conference, 683-686.