Naturally formed InxAl1-xAs/InyAl1-yAs vertical superlattices

Sung Won Jun, Tae Yeon Seong, J. H. Lee, Bun Lee

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

InxAl1-xAs/InyAl1-yAs vertical superlattices (VS) were naturally formed by phase separation during the growth of InAlAs/InP layers at temperatures in the range 565-615°C by metalorganic chemical vapor deposition. The VS lies perpendicular to the (001) growth plane. As the growth temperature increased from 565 to 615°C, the VS decreased in thickness from ∼15 to ∼6 nm, and became less planar and uniform. Transmission electron diffraction results showed the occurrence of CuPt-type ordering in some of the layers. Band-gap reduction of ∼300 meV was observed in the InAlAs layers grown at temperatures ranging from 565 to 615°C. Such a large reduction in band-gap energy was attributed to combined effects of the VS and CuPt-type ordering.

Original languageEnglish
Pages (from-to)3443-3445
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number24
DOIs
Publication statusPublished - 1996 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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