Naturally formed InxAl1-xAs/InyAl1-yAs vertical superlattices

Sung Won Jun, Tae Yeon Seong, J. H. Lee, Bun Lee

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

InxAl1-xAs/InyAl1-yAs vertical superlattices (VS) were naturally formed by phase separation during the growth of InAlAs/InP layers at temperatures in the range 565-615°C by metalorganic chemical vapor deposition. The VS lies perpendicular to the (001) growth plane. As the growth temperature increased from 565 to 615°C, the VS decreased in thickness from ∼15 to ∼6 nm, and became less planar and uniform. Transmission electron diffraction results showed the occurrence of CuPt-type ordering in some of the layers. Band-gap reduction of ∼300 meV was observed in the InAlAs layers grown at temperatures ranging from 565 to 615°C. Such a large reduction in band-gap energy was attributed to combined effects of the VS and CuPt-type ordering.

Original languageEnglish
Pages (from-to)3443-3445
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number24
DOIs
Publication statusPublished - 1996 Dec 1
Externally publishedYes

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superlattices
metalorganic chemical vapor deposition
temperature
electron diffraction
occurrences

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Naturally formed InxAl1-xAs/InyAl1-yAs vertical superlattices. / Jun, Sung Won; Seong, Tae Yeon; Lee, J. H.; Lee, Bun.

In: Applied Physics Letters, Vol. 68, No. 24, 01.12.1996, p. 3443-3445.

Research output: Contribution to journalArticle

Jun, Sung Won ; Seong, Tae Yeon ; Lee, J. H. ; Lee, Bun. / Naturally formed InxAl1-xAs/InyAl1-yAs vertical superlattices. In: Applied Physics Letters. 1996 ; Vol. 68, No. 24. pp. 3443-3445.
@article{d924b899fb294cfc893f568e62b255cb,
title = "Naturally formed InxAl1-xAs/InyAl1-yAs vertical superlattices",
abstract = "InxAl1-xAs/InyAl1-yAs vertical superlattices (VS) were naturally formed by phase separation during the growth of InAlAs/InP layers at temperatures in the range 565-615°C by metalorganic chemical vapor deposition. The VS lies perpendicular to the (001) growth plane. As the growth temperature increased from 565 to 615°C, the VS decreased in thickness from ∼15 to ∼6 nm, and became less planar and uniform. Transmission electron diffraction results showed the occurrence of CuPt-type ordering in some of the layers. Band-gap reduction of ∼300 meV was observed in the InAlAs layers grown at temperatures ranging from 565 to 615°C. Such a large reduction in band-gap energy was attributed to combined effects of the VS and CuPt-type ordering.",
author = "Jun, {Sung Won} and Seong, {Tae Yeon} and Lee, {J. H.} and Bun Lee",
year = "1996",
month = "12",
day = "1",
doi = "10.1063/1.115787",
language = "English",
volume = "68",
pages = "3443--3445",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Naturally formed InxAl1-xAs/InyAl1-yAs vertical superlattices

AU - Jun, Sung Won

AU - Seong, Tae Yeon

AU - Lee, J. H.

AU - Lee, Bun

PY - 1996/12/1

Y1 - 1996/12/1

N2 - InxAl1-xAs/InyAl1-yAs vertical superlattices (VS) were naturally formed by phase separation during the growth of InAlAs/InP layers at temperatures in the range 565-615°C by metalorganic chemical vapor deposition. The VS lies perpendicular to the (001) growth plane. As the growth temperature increased from 565 to 615°C, the VS decreased in thickness from ∼15 to ∼6 nm, and became less planar and uniform. Transmission electron diffraction results showed the occurrence of CuPt-type ordering in some of the layers. Band-gap reduction of ∼300 meV was observed in the InAlAs layers grown at temperatures ranging from 565 to 615°C. Such a large reduction in band-gap energy was attributed to combined effects of the VS and CuPt-type ordering.

AB - InxAl1-xAs/InyAl1-yAs vertical superlattices (VS) were naturally formed by phase separation during the growth of InAlAs/InP layers at temperatures in the range 565-615°C by metalorganic chemical vapor deposition. The VS lies perpendicular to the (001) growth plane. As the growth temperature increased from 565 to 615°C, the VS decreased in thickness from ∼15 to ∼6 nm, and became less planar and uniform. Transmission electron diffraction results showed the occurrence of CuPt-type ordering in some of the layers. Band-gap reduction of ∼300 meV was observed in the InAlAs layers grown at temperatures ranging from 565 to 615°C. Such a large reduction in band-gap energy was attributed to combined effects of the VS and CuPt-type ordering.

UR - http://www.scopus.com/inward/record.url?scp=0000590537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000590537&partnerID=8YFLogxK

U2 - 10.1063/1.115787

DO - 10.1063/1.115787

M3 - Article

VL - 68

SP - 3443

EP - 3445

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -