Nature of luminescence and strain in gallium nitride nanowires

M. A. Mastro, S. Maximenko, M. Gowda, B. S. Simpkins, P. E. Pehrsson, J. P. Long, A. J. Makinen, J. A. Freitas, J. K. Hite, C. R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.

Original languageEnglish
Pages (from-to)2982-2986
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
Publication statusPublished - 2009 May 1

Fingerprint

Gallium nitride
gallium nitrides
Nanowires
Luminescence
nanowires
luminescence
Spectrum analysis
Wire
Defects
spectral emission
spectrum analysis
gallium nitride
examination
wire
trends
defects

Keywords

  • A1. Stresses
  • B1. Gallium compounds
  • B1. Nanomaterials
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Mastro, M. A., Maximenko, S., Gowda, M., Simpkins, B. S., Pehrsson, P. E., Long, J. P., ... Kim, J. H. (2009). Nature of luminescence and strain in gallium nitride nanowires. Journal of Crystal Growth, 311(10), 2982-2986. https://doi.org/10.1016/j.jcrysgro.2009.01.053

Nature of luminescence and strain in gallium nitride nanowires. / Mastro, M. A.; Maximenko, S.; Gowda, M.; Simpkins, B. S.; Pehrsson, P. E.; Long, J. P.; Makinen, A. J.; Freitas, J. A.; Hite, J. K.; Eddy, C. R.; Kim, Ji Hyun.

In: Journal of Crystal Growth, Vol. 311, No. 10, 01.05.2009, p. 2982-2986.

Research output: Contribution to journalArticle

Mastro, MA, Maximenko, S, Gowda, M, Simpkins, BS, Pehrsson, PE, Long, JP, Makinen, AJ, Freitas, JA, Hite, JK, Eddy, CR & Kim, JH 2009, 'Nature of luminescence and strain in gallium nitride nanowires', Journal of Crystal Growth, vol. 311, no. 10, pp. 2982-2986. https://doi.org/10.1016/j.jcrysgro.2009.01.053
Mastro MA, Maximenko S, Gowda M, Simpkins BS, Pehrsson PE, Long JP et al. Nature of luminescence and strain in gallium nitride nanowires. Journal of Crystal Growth. 2009 May 1;311(10):2982-2986. https://doi.org/10.1016/j.jcrysgro.2009.01.053
Mastro, M. A. ; Maximenko, S. ; Gowda, M. ; Simpkins, B. S. ; Pehrsson, P. E. ; Long, J. P. ; Makinen, A. J. ; Freitas, J. A. ; Hite, J. K. ; Eddy, C. R. ; Kim, Ji Hyun. / Nature of luminescence and strain in gallium nitride nanowires. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 10. pp. 2982-2986.
@article{76f936c40ded4b42bbb2f7eb365ad843,
title = "Nature of luminescence and strain in gallium nitride nanowires",
abstract = "Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.",
keywords = "A1. Stresses, B1. Gallium compounds, B1. Nanomaterials, B2. Semiconducting gallium compounds",
author = "Mastro, {M. A.} and S. Maximenko and M. Gowda and Simpkins, {B. S.} and Pehrsson, {P. E.} and Long, {J. P.} and Makinen, {A. J.} and Freitas, {J. A.} and Hite, {J. K.} and Eddy, {C. R.} and Kim, {Ji Hyun}",
year = "2009",
month = "5",
day = "1",
doi = "10.1016/j.jcrysgro.2009.01.053",
language = "English",
volume = "311",
pages = "2982--2986",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "10",

}

TY - JOUR

T1 - Nature of luminescence and strain in gallium nitride nanowires

AU - Mastro, M. A.

AU - Maximenko, S.

AU - Gowda, M.

AU - Simpkins, B. S.

AU - Pehrsson, P. E.

AU - Long, J. P.

AU - Makinen, A. J.

AU - Freitas, J. A.

AU - Hite, J. K.

AU - Eddy, C. R.

AU - Kim, Ji Hyun

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.

AB - Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.

KW - A1. Stresses

KW - B1. Gallium compounds

KW - B1. Nanomaterials

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=65749097862&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65749097862&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.01.053

DO - 10.1016/j.jcrysgro.2009.01.053

M3 - Article

VL - 311

SP - 2982

EP - 2986

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 10

ER -