Near infrared ray annealing effects on the properties of Al-doped ZnO thin films prepared by spin-coating method

Min Chul Jun, Sang Uk Park, Moon Soon Chae, Dong Jin Shin, Jae Geun Ha, Sang Mo Koo, Kyung Ju Lee, Byung-Moo Moon, Chi Young Song, Jung Hyuk Koh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this research, we will present Al doped ZnO thin films for transparent conducting oxide applications. Aluminum doped zinc oxide (AZO) thin films have been deposited on the glass substrates by sol-gel spin-coating method using zinc acetate dehydrate (Zn(CH3COO)2 · 2H2O) and aluminum chloride hexahydrate (AlCl3 · 6H2O) as cation sources. In this study, we investigated the effects of near infrared ray (NIR) annealing on the structural, optical and electrical characteristics of the AZO thin films. The experimental results showed that AZO thin films have a hexagonal wurtzite crystal structure and had a good transmittance higher than 85% within the visible wavelength region. It was also found that the additional energy of NIR helps to improve the electrical properties of Al doped ZnO transparent conducting oxides.

Original languageEnglish
Pages (from-to)6312-6315
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

Fingerprint

Infrared Rays
Zinc Oxide
Spin coating
Aluminum
coating
rays
Zinc oxide
zinc oxides
Annealing
Oxide films
Infrared radiation
Thin films
Oxides
annealing
thin films
Zinc Acetate
aluminum
Polymethyl Methacrylate
aluminum chlorides
Aluminum chloride

Keywords

  • Al-doped ZnO
  • NIR
  • Spin-coating
  • Thin films
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Near infrared ray annealing effects on the properties of Al-doped ZnO thin films prepared by spin-coating method. / Jun, Min Chul; Park, Sang Uk; Chae, Moon Soon; Shin, Dong Jin; Ha, Jae Geun; Koo, Sang Mo; Lee, Kyung Ju; Moon, Byung-Moo; Song, Chi Young; Koh, Jung Hyuk.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 9, 01.09.2013, p. 6312-6315.

Research output: Contribution to journalArticle

Jun, Min Chul ; Park, Sang Uk ; Chae, Moon Soon ; Shin, Dong Jin ; Ha, Jae Geun ; Koo, Sang Mo ; Lee, Kyung Ju ; Moon, Byung-Moo ; Song, Chi Young ; Koh, Jung Hyuk. / Near infrared ray annealing effects on the properties of Al-doped ZnO thin films prepared by spin-coating method. In: Journal of Nanoscience and Nanotechnology. 2013 ; Vol. 13, No. 9. pp. 6312-6315.
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AU - Jun, Min Chul

AU - Park, Sang Uk

AU - Chae, Moon Soon

AU - Shin, Dong Jin

AU - Ha, Jae Geun

AU - Koo, Sang Mo

AU - Lee, Kyung Ju

AU - Moon, Byung-Moo

AU - Song, Chi Young

AU - Koh, Jung Hyuk

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AB - In this research, we will present Al doped ZnO thin films for transparent conducting oxide applications. Aluminum doped zinc oxide (AZO) thin films have been deposited on the glass substrates by sol-gel spin-coating method using zinc acetate dehydrate (Zn(CH3COO)2 · 2H2O) and aluminum chloride hexahydrate (AlCl3 · 6H2O) as cation sources. In this study, we investigated the effects of near infrared ray (NIR) annealing on the structural, optical and electrical characteristics of the AZO thin films. The experimental results showed that AZO thin films have a hexagonal wurtzite crystal structure and had a good transmittance higher than 85% within the visible wavelength region. It was also found that the additional energy of NIR helps to improve the electrical properties of Al doped ZnO transparent conducting oxides.

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