Near ultraviolet InGaN/AlGaN-based lightemitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors

Chang Hoon Choi, Jaecheon Han, Jae Seong Park, Tae Yeon Seong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The enhanced light output power of a InGaN/AlGaN-based lightemitting diodes (LEDs) using three different types of highly reflective Sndoped indium oxide (ITO)/Al-based p-type reflectors, namely, ITO/Al, Cudoped indium oxide (CIO)/s-ITO(sputtered)/Al, and Ag nano-dots(n-Ag)/CIO/s-ITO/Al, is presented. The ITO/Al-based reflectors exhibit lower reflectance (76 - 84% at 365 nm) than Al only reflector (91.1%). However, unlike Al only n-type contact, the ITO/Al-based contacts to p-GaN show good ohmic characteristics. Near-UV (365 nm) InGaN/AlGaN-based LEDs with ITO/Al, CIO/s-ITO/Al, and n-Ag/CIO/s-ITO/Al reflectors exhibit forward-bias voltages of 3.55, 3.48, and 3.34 V at 20 mA, respectively. The LEDs with the ITO/Al and CIO/s-ITO/Al reflectors exhibit 9.5% and 13.5% higher light output power (at 20 mA), respectively, than the LEDs with the n-Ag/CIO/s-ITO/Al reflector. The improved performance of near UV LEDs is attributed to the high reflectance and low contact resistivity of the ITO/Al-based reflectors, which are better than those of conventional Albased reflectors.

Original languageEnglish
Pages (from-to)26774-26779
Number of pages6
JournalOptics Express
Volume21
Issue number22
DOIs
Publication statusPublished - 2013 Nov 4

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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